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Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration for RF amplifier applications
期刊论文
SOLID-STATE ELECTRONICS, 2025, 卷号: 227
作者:
Guo, Haowen
;
Ye, Wenbo
;
Zhou, Junmin
;
Gu, Yitian
;
Gao, Han
Adobe PDF(4152Kb)
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收藏
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浏览/下载:19/1
|
提交时间:2025/05/12
AlGaN/GaN HEMT
Dual gate
Output-referred third-order intercept point (OIP3)
RF linearity
Third-order intermodulation (IM3)
Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT
期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:
Yitai zhu
;
Haitao Du
;
Yu Zhang
;
Haolan Qu
;
Haodong Jiang
Microsoft Word(2182Kb)
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浏览/下载:74/1
|
提交时间:2025/03/07
Aluminum gallium nitride
Deep level transient spectroscopy
Gates (transistor)
High electron mobility transistors
Indium phosphide
Junction gate field effect transistors
MOS devices
MOSFET devices
Semiconducting aluminum compounds
Semiconducting gallium compounds
Semiconducting indium phosphide
Surface discharges
Threshold voltage
AlGaN
Dynamic performance
Dynamics characteristic
Enhancement mode
GaN metal oxide semiconductor high electron mobility transistor
Interface traps
Metal-oxide-semiconductor high-electron mobility transistors
Neutral beam etching
Normally off
Recessed gate
Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing
期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13
作者:
Zhu, Junyan
;
Ding, Jihong
;
Ouyang, Keqing
;
Zou, Xinbo
;
Ma, Hongping
Adobe PDF(2565Kb)
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收藏
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浏览/下载:263/1
|
提交时间:2024/10/08
Aluminum gallium nitride
Electron traps
Gamma rays
Gates (transistor)
High electron mobility transistors
Irradiation
Junction gate field effect transistors
Threshold voltage
'current
AlGaN
Gate stacks
Mg-doping
Total ionizing dose effects
Trap density
Trap state
Trapping mechanisms
Voltage swings
Voltage-controlled
Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment
期刊论文
MICROELECTRONICS JOURNAL, 2024, 卷号: 148
作者:
Zhu, Yitai
;
Zhang, Yu
;
Qu, Haolan
;
Gao, Han
;
Du, Haitao
Adobe PDF(4805Kb)
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收藏
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浏览/下载:323/3
|
提交时间:2024/06/11
AlGaN/GaN HEMT
O 2 plasma treatment
Current collapse
Threshold voltage shift
Dynamic characteristic
Arrayed terahertz vector measurement system based on AlGaN/GaN HEMT heterodyne mixer
期刊论文
HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2024, 卷号: 53, 期号: 6, 页码: 166-175
作者:
Wang, Kaichu
;
Ding, Qingfeng
;
Zhou, Qi
;
Cai, Xinhang
;
Zhang, Jinfeng
收藏
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浏览/下载:251/0
|
提交时间:2024/09/20
Aluminum gallium nitride
Beam forming networks
Channel estimation
Chemical lasers
Computer testing
Direction of arrival
Distributed feedback lasers
Dye lasers
Frequency estimation
Gallium nitride
Heterodyne detection
Heterodyning
Heterojunctions
High electron mobility transistors
Hydrogen masers
Laser accessories
Laser theory
Liquid lasers
Radiometers
Temperature sensors
Terahertz wave detectors
Tetrodes
Time difference of arrival
AlGaN/GaN high electron mobility transistors
Arrayed detector
Coherent detection
Directionof-arrival (DOA)
Estimation of direction of arrival terahertz wave
Field of views
Heterodyne (coherent) detection
Linear-array
Tera Hertz
Vector detection
A high-RF-bandwidth, high-IF-bandwidth monolithic terahertz heterodyne receiver based on AlGaN/GaN nonlinear transmission lines as a local oscillator and mixer
期刊论文
APPLIED PHYSICS EXPRESS, 2024, 卷号: 17, 期号: 5
作者:
Xiang, Lanyong
;
Zhou, Qi
;
Qin, Chenyang
;
Ding, Qingfeng
;
Zhu, Yifan
Adobe PDF(931Kb)
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收藏
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浏览/下载:271/0
|
提交时间:2024/06/03
terahertz
harmonic mixing
nonlinear transmission line
heterodyne receiver
AlGaN/GaN
A microwave comb generator based on AlGaN/GaN heterostructure Schottky diodes nonlinear transmission line
期刊论文
APPLIED PHYSICS EXPRESS, 2023, 卷号: 16, 期号: 7
作者:
Xiang, Lanyong
;
Zhu, Yifan
;
Ding, Qingfeng
;
Luo, Yanxiang
;
Sun, Jiandong
Adobe PDF(5798Kb)
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收藏
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浏览/下载:331/0
|
提交时间:2023/07/24
NLTL
AlGaN
GaN
Schottky-barrier diode
frequency comb generator
0.2-4.0 THz broadband terahertz detector based on antenna-coupled AlGaN/GaN HEMTs arrayed in a bow-tie pattern
期刊论文
OPTICS EXPRESS, 2023, 卷号: 31, 期号: 6, 页码: 10720-10731
作者:
Zhu, Yifan
;
Ding, Qingfeng
;
Xiang, Lanyong
;
Zhang, Jinfeng
Adobe PDF(6444Kb)
|
收藏
|
浏览/下载:358/0
|
提交时间:2023/04/07
Aluminum gallium nitride
Antenna arrays
Directional patterns (antenna)
Electric resistance
Fourier transform infrared spectroscopy
Gallium nitride
III-V semiconductors
Lens antennas
Terahertz waves
AlGaN/GaN high electron mobility transistors
Antenna-coupled
Bow tie
Broadband terahertz
Centre frequency
Gated channels
High sensitivity
Noise equivalent power
Response spectra
Terahertz detectors
A room-temperature, low-impedance and high-IF-bandwidth terahertz heterodyne detector based on bowtie-antenna-coupled AlGaN/GaN HEMT
期刊论文
APPLIED PHYSICS EXPRESS, 2023, 卷号: 16, 期号: 2
作者:
Ding, Qingfeng
;
Zhu, Yifan
;
Xiang, Lanyong
;
Zhang, Jinfeng
;
Li, Xinxing
Adobe PDF(1042Kb)
|
收藏
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浏览/下载:356/0
|
提交时间:2023/03/10
Aluminum gallium nitride
Antenna arrays
Bandwidth
Electric impedance
Gallium nitride
Heterodyning
High electron mobility transistors
III-V semiconductors
Lens antennas
Low noise amplifiers
Room temperature
AlGaN/GaN high electron mobility transistors
Antenna-coupled
Bow-tie antennas
Field-effect transistor
Heterodyne
Heterodyne detectors
Intermediate frequency bandwidth
Low impedance
Low-high
Tera Hertz
Terahertz vector measurement system based on AlGaN/GaN HEMT terahertz mixer
期刊论文
HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2023, 卷号: 52, 期号: 1
作者:
Adobe PDF(2101Kb)
|
收藏
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浏览/下载:310/0
|
提交时间:2023/03/10
luminum gallium nitride
Gallium nitride
High electron mobility transistors
Lenses
Vectors
AlGaN/GaN high electron mobility transistors
Beam testing
Coherent detection
High electron-mobility transistors
Measurement system
Quasioptical systems
Tera Hertz
Terahertz detectors
Terahertz mixer
Vector measurements
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