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Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration for RF amplifier applications 期刊论文
SOLID-STATE ELECTRONICS, 2025, 卷号: 227
作者:  Guo, Haowen;  Ye, Wenbo;  Zhou, Junmin;  Gu, Yitian;  Gao, Han
Adobe PDF(4152Kb)  |  收藏  |  浏览/下载：24/1  |  提交时间：2025/05/12
Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:  Yitai zhu;  Haitao Du;  Yu Zhang;  Haolan Qu;  Haodong Jiang
Microsoft Word(2182Kb)  |  收藏  |  浏览/下载：90/1  |  提交时间：2025/03/07
氧化镓异质衬底集成技术研究进展 期刊论文
人工晶体学报, 2025, 卷号: 54, 期号: 03, 页码: 470-490
作者:  瞿振宇;  徐文慧;  江昊东;  梁恒硕;  赵天成
Adobe PDF(1960Kb)  |  收藏  |  浏览/下载：25/3  |  提交时间：2025/04/25
Neutral Beam Etching Enabled Recessed-Gate Emode GaN MOSHEMT: A Multi-Vth Power Device Platform for All-GaN Monolithic Integration 会议论文
INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS
作者:  Han Gao;  Yitian Gu;  Yudong Li;  Xuanling Zhou;  Haodong Jiang
Adobe PDF(1101Kb)  |  收藏  |  浏览/下载：77/4  |  提交时间：2025/03/03
Effect of 5 MeV proton irradiation on electrical and trap characteristics of β-Ga2O3 power diode 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 卷号: 187
作者:  Qu, Haolan;  Huang, Wei;  Zhang, Yu;  Sui, Jin;  Yang, Ge
Adobe PDF(6465Kb)  |  收藏  |  浏览/下载：327/4  |  提交时间：2024/11/29
1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: 72, 期号: 3, 页码: 1035-1040
作者:  Wenbo Ye;  Junmin Zhou;  Han Gao;  Haowen Guo;  Yitian Gu
Adobe PDF(1674Kb)  |  收藏  |  浏览/下载：79/4  |  提交时间：2025/02/12
Nonlinear Characteristics Analysis of GaN p-i-n Diodes at Room and Low Temperature 会议论文
2024 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP), Nanjing, China, 9-11 Nov. 2024
作者:  Junyuan Hu;  Yonghao Jia;  Xinbo Zou;  Wei-Bing Lu
Adobe PDF(839Kb)  |  收藏  |  浏览/下载：35/1  |  提交时间：2025/04/28
1.48 dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Neutralized Ion Beam Etching for LNA Applications 会议论文
THE 11TH ASIA-PACIFIC WORKSHOP ON WIDEGAP SEMICONDUCTORS, Busan, Korea, October 13-17, 2024
作者:  Wenbo Ye;  Junmin Zhou;  Han Gao;  Haowen Guo;  Yitian Gu
Adobe PDF(197Kb)  |  收藏  |  浏览/下载：36/0  |  提交时间：2025/04/02
Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing 期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13
作者:  Zhu, Junyan;  Ding, Jihong;  Ouyang, Keqing;  Zou, Xinbo;  Ma, Hongping
Adobe PDF(2565Kb)  |  收藏  |  浏览/下载：271/1  |  提交时间：2024/10/08
Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 期刊论文
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: 24, 期号: 3, 页码: 358-364
作者:  Yu Zhang;  Renqiang Zhu;  Haolan Qu;  Yitian Gu;  Huaxing Jiang
Adobe PDF(1470Kb)  |  收藏  |  浏览/下载：308/0  |  提交时间：2024/06/11
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