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Effect of 5 MeV proton irradiation on electrical and trap characteristics of β-Ga2O3 power diode 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 卷号: 187
作者:  Qu, Haolan;  Huang, Wei;  Zhang, Yu;  Sui, Jin;  Yang, Ge
Adobe PDF(6465Kb)  |  收藏  |  浏览/下载：300/4  |  提交时间：2024/11/29
Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures 期刊论文
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A: VACUUM, SURFACES AND FILMS, 2024, 卷号: 42, 期号: 2
作者:  Qu, Haolan;  Huang, Wei;  Zhang, Yu;  Sui, Jin;  Chen, Jiaxiang
Adobe PDF(3333Kb)  |  收藏  |  浏览/下载：333/3  |  提交时间：2024/02/23
Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy 期刊论文
JOURNAL OF SEMICONDUCTORS, 2024, 卷号: 45, 期号: 3
作者:  Jin Sui;  Jiaxiang Chen;  Haolan Qu;  Yu Zhang;  Xing Lu
Adobe PDF(4177Kb)  |  收藏  |  浏览/下载：274/0  |  提交时间：2024/04/06
Electrical Characterization of β-Ga2O3 Power Diodes for Cryogenic Temperature Applications 会议论文
2024 THE 18TH NATIONAL CONFERENCE ON MOCVD (MOCVD)
作者:  Qu, Haolan;  Chen, Jiaxiang;  Zhu, Yitai;  Lu, Xing;  Zhang, David Wei
收藏  |  浏览/下载：169/0  |  提交时间：2024/12/01
GaN Nanowire n-i-n Diode Enabled High-performance UV Machine Vision System 期刊论文
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2024, 卷号: PP, 期号: 99, 页码: 1-6
作者:  Haitao Du;  Yu Zhang;  Junmin Zhou;  Jiaxiang Chen;  Wenbo Ye
Adobe PDF(1079Kb)  |  收藏  |  浏览/下载：239/2  |  提交时间：2024/06/24
The Highly Operational Team (HOT) toward f-Block Materials 期刊论文
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2023, 卷号: 62, 期号: 32
作者:  Park, Kyoung Chul;  Kittikhunnatham, Preecha;  Lim, Jaewoong;  Thaggard, Grace C.;  Liu, Yuan
Adobe PDF(385206Kb)  |  收藏  |  浏览/下载：399/3  |  提交时间：2024/03/04
Investigation of a minority carrier trap in a NiO/β-Ga2O3p–n heterojunction via deep-level transient spectroscopy 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 卷号: 38, 期号: 10, 页码: 105010
作者:  Qu, Haolan;  Chen, Jiaxiang;  Zhang, Yu;  Sui, Jin;  Zhang, Ruohan
Adobe PDF(999Kb)  |  收藏  |  浏览/下载：282/0  |  提交时间：2023/09/23
Neutron Irradiation Induced Carrier Removal and Deep-Level Traps in N-Gan Schottky Barrier Diodes 会议论文
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2023), Shanghai, China, 26-27 June 2023
作者:  Jin Sui;  Jiaxiang Chen;  Haolan Qu;  Ruohan Zhang;  Min Zhu
Adobe PDF(753Kb)  |  收藏  |  浏览/下载：305/1  |  提交时间：2023/09/23
Emission and Capture Characteristics of Electron Trap (Eemi = 0.8eV) in Si-doped β-Ga2O3 Epilayer 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 卷号: 38, 期号: 1, 页码: 015001
作者:  Qu, Haolan;  Chen, Jiaxiang;  Zhang, Yu;  Sui, Jin;  Gu, Yitian
Adobe PDF(796Kb)  |  收藏  |  浏览/下载：406/0  |  提交时间：2022/11/08
Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R}_{\textsc{on}}$ in GaN MOSHEMT With ZrO $_{\text{2}}$ Gate Dielectric 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 卷号: PP, 期号: 99, 页码: 5590-5595
作者:  Yu Zhang;  Yitian Gu;  Jiaxiang Chen;  Yitai Zhu;  Baile Chen
Adobe PDF(1973Kb)  |  收藏  |  浏览/下载：186/1  |  提交时间：2023/10/07
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