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合作作者[TOP 5]

  • 邹新波

    合作成果数：12

  • 屈昊岚

    合作成果数：10

  • 陈嘉祥

    合作成果数：9

  • 张羽

    合作成果数：6

  • Lu, Xing

    合作成果数：4

访问统计


  总访问量
 732
  访问来源
    内部： 3
    外部： 729
    国内： 654
    国外： 78

  年访问量
 177
  访问来源
    内部： 0
    外部： 177
    国内： 162
    国外： 15

  月访问量
 7
  访问来源
    内部： 0
    外部： 7
    国内： 7
    国外： 0

访问量

访问量

1. Power Compression and Phase Analysis of GaN HEMT for Microwave Rec.. [1082]
2. Emission and Capture Kinetics of Minority Carrier Trap in GaN Devi.. [933]
3. Emission and Capture Characteristics of Electron Trap (Eemi = 0.8e.. [419]
4. Relaxation kinetics of interface states and bulk traps in atomic l.. [411]
5. Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si [397]
6. Reliable electrical performance of β-Ga2O3 Schottky barrier diode.. [348]
7. Neutron Irradiation Induced Carrier Removal and Deep-Level Traps i.. [327]
8. Effect of 5 MeV proton irradiation on electrical and trap characte.. [314]
9. Investigation of a minority carrier trap in a NiO/β-Ga2O3p–n het.. [291]
10. Emission and capture characteristics of deep hole trap in n-GaN by.. [288]
11. Investigation of interface and bulk traps in ZrO2/β-Ga2O3 metal-o.. [127]
12. ZrO2/β-Ga2O3 MOS器件的界面态和体陷阱物性研究 [38]
13. 基于蓝宝石衬底的氮化镓陷阱物性研究 [1]

下载量

1. Power Compression and Phase Analysis of GaN HEMT for Microwave Rec.. [500]
2. Relaxation kinetics of interface states and bulk traps in atomic l.. [52]
3. Reliable electrical performance of β-Ga2O3 Schottky barrier diode.. [4]
4. Effect of 5 MeV proton irradiation on electrical and trap characte.. [4]
5. Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si [2]
6. Neutron Irradiation Induced Carrier Removal and Deep-Level Traps i.. [1]