Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector

doi:10.1016/j.infrared.2019.06.011

	Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector
	Deng, Zhuo1 ; Guo, Daqian 2; Burguete, Claudia Gonzalez 2; Xie, Zongheng1 ; Huang, Jian1 ; Liu, Huiyun 2; Wu, Jiang 1,2,3; Chen, Baile1
	2019-09
发表期刊	INFRARED PHYSICS & TECHNOLOGY (IF:3.1[JCR-2023],3.0[5-Year])
ISSN	1350-4495
EISSN	1879-0275
卷号	101 页码:133-137
发表状态	已发表
DOI	10.1016/j.infrared.2019.06.011
摘要	In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the photoluminescence measurements reveals a power coefficient of P similar to I-0.74, indicating that defects related process is playing an important role in the predominant recombination channel for photo-generated carriers. At 70 K, the device exhibits a dark current density of 2.3 A/cm(2) under - 0.1 V bias. Arrhenius analysis of dark current shows activation energies much less than half of the active layer bandgap, which suggests that the device is mainly limited by surface leakage and defect-related generation-recombination, consistent with the photoluminescence analysis. The detector shows 50% cutoff wavelength at similar to 5.5 mu m at 70 K under bias of -0.1 V. The corresponding peak responsivity and specific detectivity are 1.2 A/W and 1.3 x 10(9) cm.Hz(1/2)/W, respectively. Based on these optoelectronics characterization results, reduction of defects by optimizing the III/V-Si interface and material growth quality are argued to be the main factors for performance improvement in this Si-based T2SL detector towards low cost, large-format MWIR detection system on Si photonics platform.
关键词	InAs/GaSb, type-II superlattice Mid-wave infrared Silicon photonics
收录类别	EI ; SCIE ; SCI
语种	英语
资助项目	UK DSTL grant[DSTLX-1000107901]
WOS研究方向	Instruments & Instrumentation ; Optics ; Physics
WOS类目	Instruments & Instrumentation ; Optics ; Physics, Applied
WOS记录号	WOS:000500038400016
出版者	ELSEVIER
EI入藏号	20192707128805
EI主题词	Activation analysis ; Activation energy ; III-V semiconductors ; Indium antimonides ; Indium arsenide ; Photodetectors ; Photoluminescence ; Photons ; Silicon photonics
EI分类号	Light/Optics:741.1 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3
WOS关键词	DIRECT GROWTH ; QUANTUM
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/57613
专题	信息科学与技术学院_PI研究组_陈佰乐组信息科学与技术学院_硕士生
通讯作者	Wu, Jiang; Chen, Baile
作者单位	1.ShanghaiTech Univ, Sch Informat Sci & Technol, Optoelect Device Lab, Shanghai 201210, Peoples R China 2.UCL, Dept Elect & Elect Engn, London WC1E 7JE, England 3.Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Sichuan, Peoples R China
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Deng, Zhuo,Guo, Daqian,Burguete, Claudia Gonzalez,et al. Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector[J]. INFRARED PHYSICS & TECHNOLOGY,2019,101:133-137.
APA	Deng, Zhuo.,Guo, Daqian.,Burguete, Claudia Gonzalez.,Xie, Zongheng.,Huang, Jian.,...&Chen, Baile.(2019).Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector.INFRARED PHYSICS & TECHNOLOGY,101,133-137.
MLA	Deng, Zhuo,et al."Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector".INFRARED PHYSICS & TECHNOLOGY 101(2019):133-137.