High-precision X-ray characterization for basic materials in modern high-end integrated circuit

doi:10.1088/1674-4926/24030016

	High-precision X-ray characterization for basic materials in modern high-end integrated circuit
	Zhao WR(赵蔚然)1,2 ; Mo QQ(莫秋祺)1,2 ; Zheng L(郑理)1; Li ZL(李中亮)3; Zhang XW(张小威)4; Yu YH(俞跃辉)1
	2024-07-01
发表期刊	JOURNAL OF SEMICONDUCTORS (IF:4.8[JCR-2023],3.3[5-Year])
ISSN	1674-4926
卷号	45 期号:7
发表状态	已发表
DOI	10.1088/1674-4926/24030016
摘要	Semiconductor materials exemplify humanity's unwavering pursuit of enhanced performance, efficiency, and functionality in electronic devices. From its early iterations to the advanced variants of today, this field has undergone an extraordinary evolution. As the reliability requirements of integrated circuits continue to increase, the industry is placing greater emphasis on the crystal qualities. Consequently, conducting a range of characterization tests on the crystals has become necessary. This paper will examine the correlation between crystal quality, device performance, and production yield, emphasizing the significance of crystal characterization tests and the important role of high-precision synchrotron radiation X-ray topography characterization in semiconductor analysis. Finally, we will cover the specific applications of synchrotron radiation characterization in the development of semiconductor materials.
关键词	X-ray topography Synchrotron radiation Semiconductor materials Crystal defects
学科领域	材料科学 ; 材料检测与分析技术
学科门类	工学 ; 工学::材料科学与工程（可授工学、理学学位）
URL	查看原文
收录类别	EI
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/503690
专题	物质科学与技术学院物质科学与技术学院_硕士生物质科学与技术学院_博士生
共同第一作者	Zheng L(郑理)
通讯作者	Zheng L(郑理)
作者单位	1.National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China 2.School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China 3.Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China 4.Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Science, Beijing 100049, China
第一作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zhao WR,Mo QQ,Zheng L,et al. High-precision X-ray characterization for basic materials in modern high-end integrated circuit[J]. JOURNAL OF SEMICONDUCTORS,2024,45(7).
APA	Zhao WR,Mo QQ,Zheng L,Li ZL,Zhang XW,&Yu YH.(2024).High-precision X-ray characterization for basic materials in modern high-end integrated circuit.JOURNAL OF SEMICONDUCTORS,45(7).
MLA	Zhao WR,et al."High-precision X-ray characterization for basic materials in modern high-end integrated circuit".JOURNAL OF SEMICONDUCTORS 45.7(2024).