Controllable magnetism and an anomalous Hall effect in (Bi1-xSbx)2Te3-intercalated MnBi2Te4 multilayers

doi:10.1039/d4nr05486e

	Controllable magnetism and an anomalous Hall effect in (Bi_1-xSb_x)₂Te₃-intercalated MnBi₂Te₄ multilayers
	Chen, Peng1,2,3 ; Liu, Jieyi 4,5; Zhang, Yifan1 ; Huang, Puyang1 ; Bollard, Jack 4,5; Yang, Yiheng 5; Arnold, Ethan L.4,5; Liu, Xinqi6,7 ; Yao, Qi6,7 ; Choueikani, Fadi 8; Hesjedal, Thorsten 4,5; van der Laan, Gerrit 4; Kou, Xufeng1,6
	2025-02-01
发表期刊	NANOSCALE (IF:5.8[JCR-2023],6.1[5-Year])
ISSN	2040-3364
EISSN	2040-3372
卷号	17 期号:11 页码:6562-6569
发表状态	已发表
DOI	10.1039/d4nr05486e
摘要	MnBi2Te4-based superlattices not only enrich the materials family of magnetic topological insulators, but also offer a platform for tailoring magnetic properties and interlayer magnetic coupling through the strategic insertion layer design. Here, we present the electrical and magnetic characterization of (Bi1-xSbx)2Te3-intercalated MnBi2Te4 multilayers grown by molecular beam epitaxy. By precisely adjusting the Sb-to-Bi ratio in the spacer layer, the magneto-transport response is modulated, unveiling the critical role of Fermi level tuning in optimizing the anomalous Hall signal and reconfiguring the magnetic ground state. Moreover, by varying the interlayer thickness, tunable magnetic coupling is achieved, enabling precise control over ferromagnetic and antiferromagnetic components. These findings pave the way for the exploration of versatile magnetic topological phases in quantum materials systems.
关键词	Antiferromagnetic materials - Antiferromagnetism - Bismuth compounds - Ferromagnetic materials - III-V semiconductors - Nanocrystals - Quantum Hall effect - Topological insulators Anomalous hall effects - Electrical characterization - Insertion layers - Magnetic characterization - Magnetic interlayers - Magneto-transport response - Molecular-beam epitaxy - Property - Spacer layer - Topological insulators
URL	查看原文
收录类别	SCI ; EI
语种	英语
资助项目	National Basic Research Program of China (973 Program)[2023YFB4404000] ; National Key R&D Program of China[92164104] ; National Natural Science Foundation of China[2018SHZDZX02] ; Shanghai Engineering Research Center of Energy Efficient and Custom AI IC[
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:001423675500001
出版者	ROYAL SOC CHEMISTRY
EI入藏号	20250917938280
EI主题词	Molecular beam epitaxy
EI分类号	1004 Thermoelectric Energy and Power Generation - 1301.4 Solid State Physics - 1301.4.1 Crystalline Solids and Crystallography - 1301.4.1.2 Crystal Growth - 202.9.3 Others, including Bismuth, Boron, Cadmium, Cobalt, Mercury, Niobium, Selenium, Silicon, Tellurium and Zirconium - 701.2 Magnetism: Basic Concepts and Phenomena - 708.4 Magnetic Materials - 712.1.2 Compound Semiconducting Materials - 761 Nanotechnology
原始文献类型	Article in Press
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/493511
专题	信息科学与技术学院物质科学与技术学院信息科学与技术学院_PI研究组_寇煦丰组物质科学与技术学院_博士生信息科学与技术学院_硕士生物质科学与技术学院_公共科研平台_拓扑物理实验室
通讯作者	Liu, Jieyi; Kou, Xufeng
作者单位	1.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China 3.Univ Chinese Acad Sci, Beijing 101408, Peoples R China 4.Diamond Light Source, Harwell Sci & Innovat Campus, Didcot OX11 0DE, England 5.Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England 6.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China 7.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 8.Synchrotron SOLEIL, LOrme Merisiers,Departementale 128, F-91190 Saint Aubin, France
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院; 上海科技大学
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Chen, Peng,Liu, Jieyi,Zhang, Yifan,et al. Controllable magnetism and an anomalous Hall effect in (Bi_1-xSb_x)₂Te₃-intercalated MnBi₂Te₄ multilayers[J]. NANOSCALE,2025,17(11):6562-6569.
APA	Chen, Peng.,Liu, Jieyi.,Zhang, Yifan.,Huang, Puyang.,Bollard, Jack.,...&Kou, Xufeng.(2025).Controllable magnetism and an anomalous Hall effect in (Bi_1-xSb_x)₂Te₃-intercalated MnBi₂Te₄ multilayers.NANOSCALE,17(11),6562-6569.
MLA	Chen, Peng,et al."Controllable magnetism and an anomalous Hall effect in (Bi_1-xSb_x)₂Te₃-intercalated MnBi₂Te₄ multilayers".NANOSCALE 17.11(2025):6562-6569.