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| Tunable interfacial Rashba spin-orbit coupling in asymmetric AlxIn1−xSb/InSb/CdTe quantum well heterostructures | |
| 2025-01-06 | |
| 发表期刊 | APPLIED PHYSICS LETTERS (IF:3.5[JCR-2023],3.5[5-Year]) |
| ISSN | 0003-6951 |
| 卷号 | 126期号:1 |
| 发表状态 | 已发表 |
| DOI | 10.1063/5.0233964 |
| 摘要 | We report the manipulation of the Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown AlxIn1−xSb/InSb/CdTe quantum well heterostructures. The effective band bending warrants a robust two-dimensional quantum confinement effect, and the unidirectional built-in electric field arisen from the asymmetric hetero-interfaces leads to a pronounced Rashba SOC strength. By tuning the Al concentration in the top AlxIn1−xSb barrier layer, the optimal structure of x = 0.15 exhibits the largest Rashba coefficient of 0.23 eV Å as well as the highest low-temperature electron mobility of 4400 cm2 · V−1 · s−1. Moreover, quantitative investigations of the weak anti-localization effect further justify the prevailing D'yakonov-Perel spin relaxation mechanism during the charge-to-spin conversion process. Our results underscore the importance of quantum well engineering in shaping the magneto-resistance responses, and the narrow bandgap semiconductor-based heterostructures may serve as a reliable framework for designing energy-efficient spintronic applications. © 2025 Author(s). |
| 关键词 | Cadmium alloys Cadmium telluride Gallium phosphide Heterodyning Heterojunctions Indium phosphide Narrow band gap semiconductors Selenium compounds Semiconducting aluminum compounds Semiconducting antimony compounds Semiconducting cadmium compounds Semiconducting gallium compounds Semiconducting indium phosphide Semiconductor quantum wells Silicon compounds Spin orbit coupling Spintronics Band bendings CdTe Molecular-beam epitaxy Quantum confinement effects Quantum-well heterostructure Rashba spin-orbit coupling Rashba-type spin-orbit Spin-orbit couplings Tunables Two-dimensional |
| 收录类别 | EI |
| 语种 | 英语 |
| 出版者 | American Institute of Physics |
| EI入藏号 | 20250417740294 |
| EI主题词 | Molecular beam epitaxy |
| EI分类号 | 1301.1.3 ; 1301.1.4 ; 1301.4 ; 1301.4.1.2 ; 202.9.3 ; 712.1 Semiconducting Materials ; 712.1.2 Compound Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 716.1 Information Theory and Signal Processing ; 762 Magnetoelectronics (Spintronics) ; 804 Chemical Products Generally ; 804.2 Inorganic Compounds |
| 原始文献类型 | Journal article (JA) |
| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/483844 |
| 专题 | 信息科学与技术学院 物质科学与技术学院 信息科学与技术学院_公共科研平台_机电能源与电子器件科研平台 信息科学与技术学院_PI研究组_寇煦丰组 物质科学与技术学院_硕士生 物质科学与技术学院_博士生 信息科学与技术学院_硕士生 信息科学与技术学院_博士生 物质科学与技术学院_公共科研平台_拓扑物理实验室 |
| 共同第一作者 | Wu, Yuyang |
| 通讯作者 | Che, Renchao; Kou, Xufeng |
| 作者单位 | 1.School of Information Science and Technology, ShanghaiTech University, Shanghai; 201210, China; 2.Department of Materials Science, Fudan University, Shanghai; 20043, China; 3.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China; 4.ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai; 200031, China |
| 第一作者单位 | 信息科学与技术学院 |
| 通讯作者单位 | 信息科学与技术学院; 上海科技大学 |
| 第一作者的第一单位 | 信息科学与技术学院 |
| 推荐引用方式 GB/T 7714 | Zhi, Zhenghang,Wu, Yuyang,Ruan, Hanzhi,et al. Tunable interfacial Rashba spin-orbit coupling in asymmetric AlxIn1−xSb/InSb/CdTe quantum well heterostructures[J]. APPLIED PHYSICS LETTERS,2025,126(1). |
| APA | Zhi, Zhenghang.,Wu, Yuyang.,Ruan, Hanzhi.,Liu, Jiuming.,Huang, Puyang.,...&Kou, Xufeng.(2025).Tunable interfacial Rashba spin-orbit coupling in asymmetric AlxIn1−xSb/InSb/CdTe quantum well heterostructures.APPLIED PHYSICS LETTERS,126(1). |
| MLA | Zhi, Zhenghang,et al."Tunable interfacial Rashba spin-orbit coupling in asymmetric AlxIn1−xSb/InSb/CdTe quantum well heterostructures".APPLIED PHYSICS LETTERS 126.1(2025). |
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