Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect

doi:arXiv:2409.09587

	Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect
	Liu, Jiuming1 ; Rong, Bin1 ; Bai, Hua 2; Liu, Xinqi3 ; Liu, Yanghui1 ; Zhang, Yifan1 ; Xiao, Yujie4 ; Liang, Yuzhen1 ; Yao, Qi3,4 ; Liao, Liyang 5; Yang, Yumeng1 ; Song, Cheng 2; Kou, Xufeng1,3
	2024-09-15
状态	已发表
摘要	The non-uniform current distribution arisen from either current crowding effect or hot spot effect provides a method to tailor the interaction between thermal gradient and electron transport in magnetically ordered systems. Here we apply the device structural engineering to realize an in-plane inhomogeneous temperature distribution within the conduction channel, and the resulting geometric anomalous Nernst effect (GANE) gives rise to a non-zero 2^nd -harmonic resistance whose polarity corresponds to the out-of-plane magnetization of Co/Pt multi-layer thin film, and its amplitude is linearly proportional to the applied current. By optimizing the aspect ratio of convex-shaped device, the effective temperature gradient can reach up to 0.3 K/Î¼m along the y-direction, leading to a GANE signal of 28.3 Î¼V. Moreover, we demonstrate electrical write and read operations in the perpendicularly-magnetized Co/Pt-based spin-orbit torque device with a simple two-terminal structure. Our results unveil a new pathway to utilize thermoelectric effects for constructing high-density magnetic memories
关键词	Anomalous Nernst effect device geometry spin-orbit coupling two-terminal spin-orbit- toque memory nonlinear effects
语种	英语
DOI	arXiv:2409.09587
相关网址	查看原文
出处	Arxiv
收录类别	PPRN.PPRN
WOS记录号	PPRN:119220548
WOS类目	Physics, Applied ; Physics, Condensed Matter
资助项目	ShanghaiTech Material Device and Soft Matter Nano-fabrication Labs[SMN180827] ; Major Project of Shanghai Municipal Science and Technology[2018SHZDZX02] ; National Natural Science Foundation of China[92164104] ; National Key R&D Program of China[2023YFB4404000]
文献类型	预印本
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/464727
专题	信息科学与技术学院物质科学与技术学院信息科学与技术学院_PI研究组_寇煦丰组物质科学与技术学院_硕士生物质科学与技术学院_博士生信息科学与技术学院_硕士生信息科学与技术学院_博士生物质科学与技术学院_公共科研平台_拓扑物理实验室信息科学与技术学院_PI研究组_杨雨梦组
通讯作者	Song, Cheng; Kou, Xufeng
作者单位	1.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China 2.Tsinghua Univ, Beijing Innovat Ctr Future Chips, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China 3.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 5.Univ Tokyo, Inst Solid State Phys, Kashiwa 2778581, Japan
推荐引用方式 GB/T 7714	Liu, Jiuming,Rong, Bin,Bai, Hua,et al. Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect. 2024.