Linearity-Enhanced GaN Power Amplifier with Dual-Transistor Compensation Strategy

doi:10.1109/IWS61525.2024.10713630

	Linearity-Enhanced GaN Power Amplifier with Dual-Transistor Compensation Strategy
	Ke Li1 ; Yi Ma1,2 ; Xinbo Zou1
	2024
会议录名称	2024 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS)
发表状态	已发表
DOI	10.1109/IWS61525.2024.10713630
摘要	In this article, a parallel dual-transistor architecture with different bias voltage is proposed to compensate the soft gain compression (AM-AM distortion) and phase shift (AMPM distortion) behaviors in GaN power amplifiers (PAs). The compressive and expanding nonlinear curves of the transistor's large signal transconductance (gm) and input capacitance (Cin) are combined to achieve flat total gm and Cin over a wide output power range. As a proof-of-concept prototype, a 3.5 GHz PA using commercial GaN HEMTs is fabricated, powered by a 48V power supply, achieving 41.25–41.89 dBm output power 3-dB compression point (OP3-dB), 57.8–63.1% power added efficiency (PAE) and 17.3-20.4 dB power gain over n78 band. Within the operating frequency range, the output power back-off within the range of 20 dBm, AM-AM distortion is less than 1 dB, and AMPM distortion is less than 2 deg.
会议录编者/会议主办者	IEEE Microwave Theory and Techniques Society ; Microwave Society of the Chinese Institute of Electronics
关键词	High electron mobility transistors III-V semiconductors Junction gate field effect transistors Masers Power amplifiers Power HEMT System-on-chip AM-AM distortion AM-PM Compensation strategy Gain compression GaN power amplifier Output power Power Power amplifier Soft gain compression Transistor architecture
会议名称	11th IEEE MTT-S International Wireless Symposium, IWS 2024
会议地点	Beijing, China
会议日期	16-19 May 2024
URL	查看原文
收录类别	EI
语种	英语
出版者	Institute of Electrical and Electronics Engineers Inc.
EI入藏号	20244717380623
EI主题词	Gallium nitride
EI分类号	1102.3.1 ; 712.1.2 Compound Semiconducting Materials ; 713.1 Amplifiers ; 714 Electronic Components and Tubes ; 714.2 Semiconductor Devices and Integrated Circuits
原始文献类型	Conference article (CA)
来源库	IEEE
文献类型	会议论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/421405
专题	信息科学与技术学院信息科学与技术学院_PI研究组_邹新波组信息科学与技术学院_硕士生
作者单位	1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, Shanghai, China
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Ke Li,Yi Ma,Xinbo Zou. Linearity-Enhanced GaN Power Amplifier with Dual-Transistor Compensation Strategy[C]//IEEE Microwave Theory and Techniques Society, Microwave Society of the Chinese Institute of Electronics:Institute of Electrical and Electronics Engineers Inc.,2024.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
IWS poster·.jpg（176KB）	图像		限制开放	--	请求全文
录用.png（202KB）	图像		限制开放	--	请求全文