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Linearity-Enhanced GaN Power Amplifier with Dual-Transistor Compensation Strategy | |
2024-05-19 | |
会议录名称 | 2024 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS)
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发表状态 | 已发表 |
DOI | 10.1109/IWS61525.2024.10713630 |
摘要 | In this article, a parallel dual-transistor architecture with different bias voltage is proposed to compensate the soft gain compression (AM-AM distortion) and phase shift (AMPM distortion) behaviors in GaN power amplifiers (PAs). The compressive and expanding nonlinear curves of the transistor's large signal transconductance (gm) and input capacitance (Cin) are combined to achieve flat total gm and Cin over a wide output power range. As a proof-of-concept prototype, a 3.5 GHz PA using commercial GaN HEMTs is fabricated, powered by a 48V power supply, achieving 41.25–41.89 dBm output power 3-dB compression point (OP3-dB), 57.8–63.1% power added efficiency (PAE) and 17.3-20.4 dB power gain over n78 band. Within the operating frequency range, the output power back-off within the range of 20 dBm, AM-AM distortion is less than 1 dB, and AMPM distortion is less than 2 deg. |
会议录编者/会议主办者 | IEEE Microwave Theory and Techniques Society ; Microwave Society of the Chinese Institute of Electronics |
关键词 | High electron mobility transistors III-V semiconductors Junction gate field effect transistors Masers Power amplifiers Power HEMT System-on-chip AM-AM distortion AM-PM Compensation strategy Gain compression GaN power amplifier Output power Power Power amplifier Soft gain compression Transistor architecture |
会议名称 | 11th IEEE MTT-S International Wireless Symposium, IWS 2024 |
会议地点 | Beijing, China |
会议日期 | 16-19 May 2024 |
URL | 查看原文 |
收录类别 | EI |
语种 | 英语 |
出版者 | Institute of Electrical and Electronics Engineers Inc. |
EI入藏号 | 20244717380623 |
EI主题词 | Gallium nitride |
EI分类号 | 1102.3.1 ; 712.1.2 Compound Semiconducting Materials ; 713.1 Amplifiers ; 714 Electronic Components and Tubes ; 714.2 Semiconductor Devices and Integrated Circuits |
原始文献类型 | Conference article (CA) |
来源库 | IEEE |
文献类型 | 会议论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/421405 |
专题 | 信息科学与技术学院 信息科学与技术学院_PI研究组_邹新波组 信息科学与技术学院_硕士生 |
作者单位 | 1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, Shanghai, China |
第一作者单位 | 信息科学与技术学院 |
第一作者的第一单位 | 信息科学与技术学院 |
推荐引用方式 GB/T 7714 | Ke Li,Yi Ma,Xinbo Zou. Linearity-Enhanced GaN Power Amplifier with Dual-Transistor Compensation Strategy[C]//IEEE Microwave Theory and Techniques Society, Microwave Society of the Chinese Institute of Electronics:Institute of Electrical and Electronics Engineers Inc.,2024. |
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