Influence of Localized Hot Carrier Degradation in DSOI Device Operating in MOSFET and BJT Modes
2024-03-06
会议录名称2024 8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM)
发表状态已发表
DOI10.1109/EDTM58488.2024.10511711
摘要Hot carrier degradation in double SOI devices was investigated under both MOSFET and BJT operation modes. It was found that hot carrier stress (HCS) induced traps deteriorate the parameters in MOSFET mode and increase the base current in BJT mode. Moreover, a recommended terminal setup between the two modes for better reliability performance is provided through further experimental results with interchanged connection. Our work contributes to the reliability analysis in SOI devices with alternative modes. © 2024 IEEE.
关键词Hot carrier degradation DSOI MOSFET BJT
会议名称8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024
会议地点Bangalore, India
会议日期3-6 March 2024
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收录类别EI
语种英语
出版者Institute of Electrical and Electronics Engineers Inc.
EI入藏号20242116107979
EI主题词Reliability analysis
EI分类号701.1 Electricity: Basic Concepts and Phenomena ; 714.2 Semiconductor Devices and Integrated Circuits
原始文献类型Conference article (CA)
来源库IEEE
文献类型会议论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/373018
专题信息科学与技术学院
信息科学与技术学院_PI研究组_吴涛组
信息科学与技术学院_博士生
信息科学与技术学院_PI研究组_杨雨梦组
作者单位
1.School of Information Science and Technology, ShanghaiTech University, China
2.National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China
3.Shanghai Simchip Technology Group Company Ltd., China
第一作者单位信息科学与技术学院
第一作者的第一单位信息科学与技术学院
推荐引用方式
GB/T 7714
Yijun Qian,Yuan Gao,Amit Kumar Shukla,et al. Influence of Localized Hot Carrier Degradation in DSOI Device Operating in MOSFET and BJT Modes[C]:Institute of Electrical and Electronics Engineers Inc.,2024.
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