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Influence of Localized Hot Carrier Degradation in DSOI Device Operating in MOSFET and BJT Modes | |
2024-03-06 | |
会议录名称 | 2024 8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM)
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发表状态 | 已发表 |
DOI | 10.1109/EDTM58488.2024.10511711 |
摘要 | Hot carrier degradation in double SOI devices was investigated under both MOSFET and BJT operation modes. It was found that hot carrier stress (HCS) induced traps deteriorate the parameters in MOSFET mode and increase the base current in BJT mode. Moreover, a recommended terminal setup between the two modes for better reliability performance is provided through further experimental results with interchanged connection. Our work contributes to the reliability analysis in SOI devices with alternative modes. © 2024 IEEE. |
关键词 | Hot carrier degradation DSOI MOSFET BJT |
会议名称 | 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 |
会议地点 | Bangalore, India |
会议日期 | 3-6 March 2024 |
URL | 查看原文 |
收录类别 | EI |
语种 | 英语 |
出版者 | Institute of Electrical and Electronics Engineers Inc. |
EI入藏号 | 20242116107979 |
EI主题词 | Reliability analysis |
EI分类号 | 701.1 Electricity: Basic Concepts and Phenomena ; 714.2 Semiconductor Devices and Integrated Circuits |
原始文献类型 | Conference article (CA) |
来源库 | IEEE |
文献类型 | 会议论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/373018 |
专题 | 信息科学与技术学院 信息科学与技术学院_PI研究组_吴涛组 信息科学与技术学院_博士生 信息科学与技术学院_PI研究组_杨雨梦组 |
作者单位 | 1.School of Information Science and Technology, ShanghaiTech University, China 2.National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China 3.Shanghai Simchip Technology Group Company Ltd., China |
第一作者单位 | 信息科学与技术学院 |
第一作者的第一单位 | 信息科学与技术学院 |
推荐引用方式 GB/T 7714 | Yijun Qian,Yuan Gao,Amit Kumar Shukla,et al. Influence of Localized Hot Carrier Degradation in DSOI Device Operating in MOSFET and BJT Modes[C]:Institute of Electrical and Electronics Engineers Inc.,2024. |
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