Neutron Irradiation Induced Carrier Removal and Deep-Level Traps in N-Gan Schottky Barrier Diodes

doi:10.1109/CSTIC58779.2023.10219301

	Neutron Irradiation Induced Carrier Removal and Deep-Level Traps in N-Gan Schottky Barrier Diodes
	Jin Sui1 ; Jiaxiang Chen1 ; Haolan Qu1 ; Ruohan Zhang1 ; Min Zhu1 ; Xing Lu 2; Xinbo Zou1
	2023
会议录名称	CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2023)
发表状态	已发表
DOI	10.1109/CSTIC58779.2023.10219301
摘要	Effects of 14.9 MeV neutron irradiation on the carrier concentration (NS) and deep-level traps were analyzed for n-GaN Schottky barrier diodes (SBDs). Neutron irradiation caused a minor positive shift of threshold voltage and typically unchanged reverse leakage current. As the irradiation fluence was increased up to 8× 1014n/cm2, the net carrier concentration was significantly decreased, showing carrier removal effect. Concentration of two shallow traps (E1 and E2) in the GaN epi-layer was enhanced upon neutron irradiation, as revealed by deep-level transient spectroscopy (DLTS). A new deep-level trap E4 (EC-0.64eV) was spotted for neutron-irradiated samples. Analysis of DLTS amplitude suggested that E4 was associated with extended defects rather than point defects. The results indicate that the GaN SBDs are promising for operations in high-dose neutron radiation environments. © 2023 IEEE.
关键词	Radiation effects Schottky diodes Spectroscopy Schottky barriers Neutrons Threshold voltage Leakage currents
会议名称	2023 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE, CSTIC 2023
会议地点	Shanghai, China
会议日期	26-27 June 2023
URL	查看原文
收录类别	EI
语种	英语
出版者	Institute of Electrical and Electronics Engineers Inc.
EI入藏号	20233814740220
EI主题词	Neutron irradiation
EI分类号	701.1 Electricity: Basic Concepts and Phenomena ; 712.1 Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 933.1.1 Crystal Lattice
原始文献类型	Conference article (CA)
来源库	IEEE
文献类型	会议论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/329052
专题	信息科学与技术学院信息科学与技术学院_PI研究组_邹新波组信息科学与技术学院_硕士生信息科学与技术学院_本科生信息科学与技术学院_博士生
作者单位	1.SIST, ShanghaiTech University, Shanghai, China 2.School of Electronics and Information Technology, Sun Yat-sen Univ., Guangzhou, China
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Jin Sui,Jiaxiang Chen,Haolan Qu,et al. Neutron Irradiation Induced Carrier Removal and Deep-Level Traps in N-Gan Schottky Barrier Diodes[C]:Institute of Electrical and Electronics Engineers Inc.,2023.