300 mm integration of a scalable phase change material spacer by inductively coupled plasma etching

doi:10.1016/j.mssp.2023.107591

	300 mm integration of a scalable phase change material spacer by inductively coupled plasma etching
	Fang, Wencheng 1,2; Zheng, Jia 1,2; Zhang, Jiarui1,3 ; Li, Chengxing 1,2; Wang, Ruobing 1,2; Li, Xi 1; Song, Zhitang 1; Zhou, Xilin 1
	2023-09
发表期刊	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (IF:4.2[JCR-2023],3.9[5-Year])
ISSN	1369-8001
EISSN	1873-4081
卷号	164
发表状态	已发表
DOI	10.1016/j.mssp.2023.107591
摘要	To improve the heating efficiency and reduce the reset current of phase change memory, the volume-confined cells have been widely studied by employing highly conformal deposition techniques. In this work, a scalable confined structure with sidewall phase change material spacer is investigated for the integration in 12-inch wafer using physical vapor deposition and the subsequent anisotropic plasma etching back process. The finite element simulations reveal a remarkable 80% increase in heating efficiency by taking the confined structure. The isolated and compact trenches with the aspect ratio ranging from 0.40 to 1.04 are designed to accommodate the sidewall phase change material. The scaling down of the critical dimension of the rail-like spacer is observed as the aspect ratio increases. The spacer width of around 34 nm is well beyond the lithography capability used in this study. These results provide a promising path to fabricate the low-power and high-density memory device in a way fully compatible with the manufacturing technology. © 2023 Elsevier Ltd
关键词	Efficiency Inductively coupled plasma Phase change materials Phase change memory Physical vapor deposition Plasma etching Anisotropic plasma etching Aspect-ratio Confined structures Conformal deposition Deposition technique Heating efficiencies Inductively coupled plasma etching Phase-change memory Physical vapour deposition Reset currents
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收录类别	EI ; SCI
语种	英语
资助项目	National Natural Science Foundation of China["92164302","91964204","62174168","21IAA01896"] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB44010200] ; Science and Technology Council of Shanghai[22DZ2229009] ; Shanghai Pujiang Program[21PJ1415300]
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:001015036100001
出版者	Elsevier Ltd
EI入藏号	20232514278028
EI主题词	Aspect ratio
EI分类号	722.1 Data Storage, Equipment and Techniques ; 802.2 Chemical Reactions ; 913.1 Production Engineering ; 932.3 Plasma Physics
原始文献类型	Journal article (JA)
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/314437
专题	物质科学与技术学院物质科学与技术学院_硕士生
通讯作者	Song, Zhitang; Zhou, Xilin
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
推荐引用方式 GB/T 7714	Fang, Wencheng,Zheng, Jia,Zhang, Jiarui,et al. 300 mm integration of a scalable phase change material spacer by inductively coupled plasma etching[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2023,164.
APA	Fang, Wencheng.,Zheng, Jia.,Zhang, Jiarui.,Li, Chengxing.,Wang, Ruobing.,...&Zhou, Xilin.(2023).300 mm integration of a scalable phase change material spacer by inductively coupled plasma etching.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,164.
MLA	Fang, Wencheng,et al."300 mm integration of a scalable phase change material spacer by inductively coupled plasma etching".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 164(2023).