Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET

doi:10.1109/JEDS.2023.3278936

	Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET
	Yijun Qian1 ; Qiang Liu 2; Jialun Yao1 ; Xiaowei Wang 3; Amit Kumar Shukla 1; Fengyu Liu1 ; Tao Wu1 ; Kai Lu 4; Yemin Dong 2; Xing Wei 2; Wenjie Yu 2; Zhiqiang Mu 2; Yumeng Yang1
	2023-05
发表期刊	IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (IF:2.0[JCR-2023],2.3[5-Year])
ISSN	2168-6734
EISSN	2168-6734
卷号	11 页码:319-324
发表状态	已发表
DOI	10.1109/JEDS.2023.3278936
摘要	Forward back biasing (FBB) technique is considered as a potential solution for aging compensation in silicon on insulator (SOI) MOSFET. However, traditional SOI devices under FBB would suffer from extra off-state leakage current Ioff and undesirable static power consumption. In this work, we studied the hot carrier degradation and FBB compensation in π -GAA- π MOSFET. With the unique hybrid gate structure, the performance degradation is found to be less severe than pure π gate device; and moreover it can be partially recovered by FBB without the sacrifice of Ioff. The presence of π gates offer the back gate tunability that is not provided by pure GAA gate; while the GAA gate component can effectively prevent the impact of FBB from affecting the surface potential. Our findings in π -GAA- π hybrid gate MOSFETs would be beneficial for device reliability improvement. © 2013 IEEE.
关键词	High electron mobility transistors III-V semiconductors Leakage currents MOSFET devices Silicon on insulator technology Aging compensation Back bias Biasing techniques Forward back biasing technique Hot carrier degradation MOS-FET MOSFETs Off-state leakage current Performances evaluation Silicon-on-insulator MOSFETs
URL	查看原文
收录类别	EI
语种	英语
出版者	Institute of Electrical and Electronics Engineers Inc.
EI入藏号	20232314197215
EI主题词	Gallium arsenide
EI分类号	701.1 Electricity: Basic Concepts and Phenomena ; 712.1 Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 804 Chemical Products Generally
原始文献类型	Journal article (JA)
来源库	IEEE
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/312332
专题	信息科学与技术学院信息科学与技术学院_公共科研平台_机电能源与电子器件科研平台信息科学与技术学院_PI研究组_吴涛组信息科学与技术学院_硕士生信息科学与技术学院_博士生信息科学与技术学院_PI研究组_杨雨梦组
作者单位	1.Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China 3.i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of NanoTech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China 4.Shanghai Simchip Technology Group Company Ltd., Shanghai, China
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Yijun Qian,Qiang Liu,Jialun Yao,et al. Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET[J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2023,11:319-324.
APA	Yijun Qian.,Qiang Liu.,Jialun Yao.,Xiaowei Wang.,Amit Kumar Shukla.,...&Yumeng Yang.(2023).Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,11,319-324.
MLA	Yijun Qian,et al."Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET".IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 11(2023):319-324.