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| Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene | |
Yang, Kaining1,2; Gao, Xiang1,2; Wang, Yaning3,4; Zhang, Tongyao1,2; Gao, Yuchen5,6,7; Lu, Xin8  ; Zhang, Shihao8; Liu, Jianpeng8,9; Gu, Pingfan5,6,7; Luo, Zhaoping3; Zheng, Runjie10; Cao, Shimin10,11; Wang, Hanwen3; Sun, Xingdan3; Watanabe, Kenji12; Taniguchi, Takashi13; Li, Xiuyan3,14; Zhang, Jing1,2; Dai, Xi14,15; Chen, Jian-Hao10,11,16,17; Ye, Yu5,6,7; Han, Zheng1,2,18
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| 2023-04-14 | |
| Source Publication | NATURE COMMUNICATIONS
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| EISSN | 2041-1723 |
| Volume | 14Issue:1 |
| Status | 已发表 |
| DOI | 10.1038/s41467-023-37769-2 |
| Abstract | ["Here, the authors report evidence of unconventional correlated insulating states in bilayer graphene/CrOCl heterostructures over wide doping ranges and demonstrate their application for the realization of low-temperature logic inverters.","The realization of graphene gapped states with large on/off ratios over wide doping ranges remains challenging. Here, we investigate heterostructures based on Bernal-stacked bilayer graphene (BLG) atop few-layered CrOCl, exhibiting an over-1-G omega-resistance insulating state in a widely accessible gate voltage range. The insulating state could be switched into a metallic state with an on/off ratio up to 10(7) by applying an in-plane electric field, heating, or gating. We tentatively associate the observed behavior to the formation of a surface state in CrOCl under vertical electric fields, promoting electron-electron (e-e) interactions in BLG via long-range Coulomb coupling. Consequently, at the charge neutrality point, a crossover from single particle insulating behavior to an unconventional correlated insulator is enabled, below an onset temperature. We demonstrate the application of the insulating state for the realization of a logic inverter operating at low temperatures. Our findings pave the way for future engineering of quantum electronic states based on interfacial charge coupling."] |
| URL | 查看原文 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Key R&D Program of China["2019YFA0307800","2017YFA0206301","2018YFA0306900","2019YFA0308402","2018YFA0305604"] ; National Natural Science Foundation of China (NSFC)["92265203","11974357","U1932151","11934001","11774010","92265106","11921005"] ; MEXT, Japan[JPMXP0112101001] ; JSPS KAKENHI[JP20H00354] ; Beijing Municipal Natural Science Foundation[JQ20002] |
| WOS Research Area | Science & Technology - Other Topics |
| WOS Subject | Multidisciplinary Sciences |
| WOS ID | WOS:000969250300021 |
| Publisher | NATURE PORTFOLIO |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/305009 |
| Collection | 物质科学与技术学院 生命科学与技术学院_硕士生 物质科学与技术学院_PI研究组_刘健鹏组 |
| Corresponding Author | Lu, Xin; Dai, Xi; Chen, Jian-Hao; Ye, Yu; Han, Zheng |
| Affiliation | 1.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan, Peoples R China 2.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang, Peoples R China 4.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei, Anhui, Peoples R China 5.Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China 6.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing, Peoples R China 7.Peking Univ, Sch Phys, Frontiers Sci Ctr Nano Optoelect, Beijing, Peoples R China 8.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China 9.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai, Peoples R China 10.Peking Univ, Int Ctr Quantum Mat, Sch Phys, Beijing, Peoples R China 11.Beijing Acad Quantum Informat Sci, Beijing, Peoples R China 12.Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Japan 13.Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Japan 14.Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA 15.Hongkong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China 16.Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing, Peoples R China 17.Hefei Natl Lab, Hefei, Peoples R China 18.Liaoning Acad Mat, Shenyang, Peoples R China |
| Corresponding Author Affilication | School of Physical Science and Technology |
| Recommended Citation GB/T 7714 | Yang, Kaining,Gao, Xiang,Wang, Yaning,et al. Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene[J]. NATURE COMMUNICATIONS,2023,14(1). |
| APA | Yang, Kaining.,Gao, Xiang.,Wang, Yaning.,Zhang, Tongyao.,Gao, Yuchen.,...&Han, Zheng.(2023).Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene.NATURE COMMUNICATIONS,14(1). |
| MLA | Yang, Kaining,et al."Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene".NATURE COMMUNICATIONS 14.1(2023). |
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