A comparative study of selective dry and wet etching of germanium tin (Ge1-xSnx) on germanium

doi:10.1088/1361-6641/aace43

	A comparative study of selective dry and wet etching of germanium tin (Ge1-xSnx) on germanium
	Han, Yi 1,2,3; Li, Yaoyao 1,3; Song, Yuxin 1,2,3; Chi, Chaodan 1,2,3; Zhang, Zhenpu1,2,4 ; Liu, Juanjuan 1,2,3; Zhu, Zhongyunsheng1,2,4 ; Wang, Shumin1,2,4,5
	2018-08
发表期刊	SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IF:1.9[JCR-2023],1.9[5-Year])
ISSN	0268-1242
卷号	33 期号:8
发表状态	已发表
DOI	10.1088/1361-6641/aace43
摘要	A comparative study of selective dry and wet etching methods for germanium-tin (Ge1-xSnx) alloys (3.5% < x < 7.7%) and germanium (Ge) is carried out. Both etching methods are optimized from the perspectives of selectivity and morphology, and then compared. A special behavior of the selective dry etching process is discovered and explained, whereby the selectivity has a dramatic increase to as high as 336 when the Sn concentration is above 6%. Different morphologies of suspended microstructures fabricated by different etching methods are investigated. Comparative study shows that the selective dry etching is a better choice for high Sn concentration GeSn (above 7%) against Ge to have better morphology, selectivity and verticality. While for low Sn concentration GeSn (below 6%), wet etching is a better way to fabricate a suspended GeSn microstructure on Ge. This work provides a comparative understanding of both methods of selective etching for GeSn. This comparative understanding is expected to be applied in the processing of next generation electronic and photonic devices.
关键词	GeSn etching process microstructure
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	Creative Research Group Project of Natural Science Foundation of China[61321492]
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
WOS记录号	WOS:000438844700002
出版者	IOP PUBLISHING LTD
EI入藏号	20183305688960
EI主题词	Germanium ; Microstructure ; Morphology ; Photonic devices ; Semiconductor alloys ; Wet etching
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Light/Optics:741.1 ; Chemical Reactions:802.2 ; Materials Science:951
WOS关键词	STRAIN RELAXATION ; ALLOYS
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/27430
专题	物质科学与技术学院信息科学与技术学院_特聘教授组_王庶民组物质科学与技术学院_硕士生物质科学与技术学院_博士生
通讯作者	Song, Yuxin; Wang, Shumin
作者单位	1.Chinese Acad Sci, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100190, Peoples R China 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 5.Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Han, Yi,Li, Yaoyao,Song, Yuxin,et al. A comparative study of selective dry and wet etching of germanium tin (Ge1-xSnx) on germanium[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2018,33(8).
APA	Han, Yi.,Li, Yaoyao.,Song, Yuxin.,Chi, Chaodan.,Zhang, Zhenpu.,...&Wang, Shumin.(2018).A comparative study of selective dry and wet etching of germanium tin (Ge1-xSnx) on germanium.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,33(8).
MLA	Han, Yi,et al."A comparative study of selective dry and wet etching of germanium tin (Ge1-xSnx) on germanium".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33.8(2018).