Room-Temperature Gate-Tunable Nonreciprocal Charge Transport in Lattice-Matched InSb/CdTe Heterostructures

doi:10.1002/adma.202207322

	Room-Temperature Gate-Tunable Nonreciprocal Charge Transport in Lattice-Matched InSb/CdTe Heterostructures
	Li, Lun1 ; Wu, Yuyang 2,3; Liu, Xiaoyang1,4,5 ; Liu, Jiuming1 ; Ruan, Hanzhi1 ; Zhi, Zhenghang1,4,5 ; Zhang, Yong1,4,5 ; Huang, Puyang1 ; Ji, Yuchen6 ; Tang, Chenjia6,7 ; Yang, Yumeng1 ; Che, Renchao 2,3; Kou, Xufeng1,7
	2022-12-01
发表期刊	ADVANCED MATERIALS
ISSN	0935-9648
EISSN	1521-4095
卷号	35 期号:3
发表状态	已发表
DOI	10.1002/adma.202207322
摘要	Symmetry manipulation can be used to effectively tailor the physical order in solid-state systems. With the breaking of both the inversion and time-reversal symmetries, nonreciprocal magneto-transport may arise in nonmagnetic systems to enrich spin-orbit effects. Here, the observation of unidirectional magnetoresistance (UMR) in lattice-matched InSb/CdTe films is investigated up to room temperature. Benefiting from the strong built-in electric field of 0.13 V nm(-1) in the heterojunction region, the resulting Rashba-type spin-orbit coupling and quantum confinement result in a distinct sinusoidal UMR signal with a nonreciprocal coefficient that is 1-2 orders of magnitude larger than most non-centrosymmetric materials at 298 K. Moreover, this heterostructure configuration enables highly efficient gate tuning of the rectification response, wherein the UMR amplitude is enhanced by 40%. The results of this study advocate the use of narrow-bandgap semiconductor-based hybrid systems with robust spin textures as suitable platforms for the pursuit of controllable chiral spin-orbit applications.
关键词	electric-field control interfacial Rashba effect narrow-bandgap semiconductor heterostructures nonreciprocal transport spin-orbit coupling
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收录类别	SCI ; EI ; SCOPUS
语种	英语
资助项目	National Key R&D Program of China[2021YFA0715503] ; National Natural Science Foundation of China["61874172","92164104"] ; Major Project of Shanghai Municipal Science and Technology[2018SHZDZX02] ; Shanghaitech Quantum Device and Soft Matter Nano-fabrication Labs[SMN180827] ; Shanghai Rising-Star program[21QA1406000] ; Shanghai Pujiang Program[20PJ1411500]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000899443200001
出版者	WILEY-V C H VERLAG GMBH
EI入藏号	20225113278131
EI主题词	Heterojunctions
EI分类号	701.1 Electricity: Basic Concepts and Phenomena ; 712.1 Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 804 Chemical Products Generally ; 921 Mathematics
原始文献类型	Journal article (JA)
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/272804
专题	信息科学与技术学院_硕士生信息科学与技术学院_PI研究组_寇煦丰组物质科学与技术学院_博士生信息科学与技术学院_博士生物质科学与技术学院_公共科研平台_拓扑物理实验室信息科学与技术学院_PI研究组_杨雨梦组
通讯作者	Che, Renchao; Kou, Xufeng
作者单位	1.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China 2.Fudan Univ, Lab Adv Mat, Shanghai Key Lab Mol Catalysis & Innovat Mat, Shanghai 200438, Peoples R China 3.Fudan Univ, Dept Mat Sci, Shanghai 200438, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China 5.Univ Chinese Acad Sci, Beijing 101408, Peoples R China 6.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 7.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院; 上海科技大学
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Li, Lun,Wu, Yuyang,Liu, Xiaoyang,et al. Room-Temperature Gate-Tunable Nonreciprocal Charge Transport in Lattice-Matched InSb/CdTe Heterostructures[J]. ADVANCED MATERIALS,2022,35(3).
APA	Li, Lun.,Wu, Yuyang.,Liu, Xiaoyang.,Liu, Jiuming.,Ruan, Hanzhi.,...&Kou, Xufeng.(2022).Room-Temperature Gate-Tunable Nonreciprocal Charge Transport in Lattice-Matched InSb/CdTe Heterostructures.ADVANCED MATERIALS,35(3).
MLA	Li, Lun,et al."Room-Temperature Gate-Tunable Nonreciprocal Charge Transport in Lattice-Matched InSb/CdTe Heterostructures".ADVANCED MATERIALS 35.3(2022).