LOW COST THIN FILM ENCAPSULATION FOR ALN RESONATORS

doi:10.1109/MEMSYS.2018.8346733

	LOW COST THIN FILM ENCAPSULATION FOR ALN RESONATORS
	Wu, Tao1 ; Qian, Zhenyun 2; Rinaldi, Matteo 2
	2018
会议录名称	2018 IEEE MICRO ELECTRO MECHANICAL SYSTEMS (MEMS)
ISSN	1084-6999
卷号	2018-January
页码	1024-1027
发表状态	已发表
DOI	10.1109/MEMSYS.2018.8346733
摘要	We report a low cost thin film packaging process of Aluminum Nitride (AlN) MEMS resonators for sensing applications in microfluidic environment or magnetoencephalography. The process flow, including release of freely vibrating nanoplate and encapsulation of the functional structures, is demonstrated using SU-8 film micromachining technology. Both fabrication outcome and characterization results under DI droplet wetting condition indicate high possibility in cost effective and footprint reduction in MEMS integration technology.
会议录编者/会议主办者	IEEE
关键词	Aluminum Nitride SU-8 Encapsulation
会议名称	31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
出版地	NEW YORK
会议地点	Belfast
会议日期	21-25 Jan. 2018
URL	查看原文
收录类别	CPCI ; EI ; CPCI-S
语种	英语
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic ; Engineering, Mechanical
WOS记录号	WOS:000434960900268
出版者	IEEE
EI入藏号	20182105215072
EI主题词	Aluminum nitride ; Brain mapping ; Cost effectiveness ; Costs ; Encapsulation ; III-V semiconductors ; Magnetoencephalography ; Mechanics ; Microelectromechanical devices ; Nitrides ; Resonators ; Thin films
EI分类号	Medicine and Pharmacology:461.6 ; Electric Equipment:704.2 ; Imaging Techniques:746 ; Inorganic Compounds:804.2 ; Cost and Value Engineering; Industrial Economics:911 ; Industrial Economics:911.2 ; Mechanics:931.1
原始文献类型	Proceedings Paper
引用统计
文献类型	会议论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/20807
专题	信息科学与技术学院_PI研究组_吴涛组
通讯作者	Wu, Tao
作者单位	1.ShanghaiTech Univ, Shanghai, Peoples R China 2.Northeastern Univ, Boston, MA 02115 USA
第一作者单位	上海科技大学
通讯作者单位	上海科技大学
第一作者的第一单位	上海科技大学
推荐引用方式 GB/T 7714	Wu, Tao,Qian, Zhenyun,Rinaldi, Matteo. LOW COST THIN FILM ENCAPSULATION FOR ALN RESONATORS[C]//IEEE. NEW YORK:IEEE,2018:1024-1027.