Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer

doi:10.1109/JEDS.2022.3189819

	Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer
	Yu Zhang1,2,3 ; Lihua Xu1,2,3 ; Yitian Gu1,2,3 ; Haowen Guo1,4 ; Huaxing Jiang 5,6; Kei May Lau 5; Xinbo Zou1,4
	2022
发表期刊	IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (IF:2.0[JCR-2023],2.3[5-Year])
ISSN	2168-6734
卷号	10 页码:1-1
发表状态	已发表
DOI	10.1109/JEDS.2022.3189819
摘要	A comprehensive study on dynamic characteristics of GaN MISHEMT with a 5nm-thick in-situ SiNx dielectric is presented. Effects of both negative and positive gate bias on threshold voltage instability were investigated and miniature threshold voltage shift was acquired. The slight shift was considered to be associated with the traps at the insulator/AlGaN interface and in the dielectric layer itself. Pulsed I-V measurements with various gate quiescent biases presented small current collapse (11%) and low enhancement of dynamic Ron for zero quiescent drain bias. When drain quiescent bias was strengthened to 20V, an increased dynamic Ron/static Ron ratio was identified but still limited to a low value of 1.24. The conduction reduction was in a good agreement with measurement results from drain current transient spectroscopy and possibly originates from trap states existed in the access region. Additional current collapse was observed in hard switching-on operation, resulted from energetic hot electrons accelerated by drain-source electrical field during the off-to-on step. The measurement results showed stabilized threshold voltage, a low dynamic Ron/static Ron ratio, and suppressed current collapse via employing a 5-nm thin in-situ SiNx layer in GaN MISHEMT, enabling it a promising solution for high-efficiency power switching applications.
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收录类别	SCI ; SCIE ; EI
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/206350
专题	信息科学与技术学院信息科学与技术学院_PI研究组_邹新波组信息科学与技术学院_硕士生信息科学与技术学院_博士生
作者单位	1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology, Shanghai, China 3.University of Chinese Academy of Sciences, Beijing, China 4.Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, ShanghaiTech University, Shanghai, China 5.Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Sai Kung, Hong Kong 6.School of Microelectronics, South China University of Technology, Guangzhou, China
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Yu Zhang,Lihua Xu,Yitian Gu,et al. Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer[J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2022,10:1-1.
APA	Yu Zhang.,Lihua Xu.,Yitian Gu.,Haowen Guo.,Huaxing Jiang.,...&Xinbo Zou.(2022).Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,10,1-1.
MLA	Yu Zhang,et al."Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer".IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 10(2022):1-1.