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Measurement of the electronic structure of a type-II topological Dirac semimetal candidate VAl3 using angle-resolved photoelectron spectroscopy | |
2022 | |
发表期刊 | TUNGSTEN (IF:5.6[JCR-2023],5.5[5-Year]) |
ISSN | 2661-8028 |
EISSN | 2661-8036 |
卷号 | 5期号:3页码:332-338 |
发表状态 | 已发表 |
DOI | 10.1007/s42864-022-00141-w |
摘要 | Type-II topological Dirac semimetals are topological quantum materials hosting Lorentz-symmetry breaking type-II Dirac fermions, which are tilted Dirac cones with various exotic physical properties, such as anisotropic chiral anomalies and novel quantum oscillations. Until now, only limited material systems have been confirmed by theory and experiments with the type-II Dirac fermions. Here, we investigated the electronic structure of a new type-II Dirac semimetal VAl3 with angle-resolved photoelectron spectroscopy. The measured band dispersions are consistent with the theoretical prediction, which suggests the Dirac points are located close to (at about 100 meV above) the Fermi level. Our work demonstrates a new type-II Dirac semimetal candidate system with different Dirac node configurations and application potentials. © 2022, The Nonferrous Metals Society of China. |
关键词 | Aluminum alloys Photoelectron spectroscopy Photoelectrons Photons Topology Angle resolved photoelectron spectroscopy Chiral anomaly Dirac cones Dirac fermions Dirac semimetal Electronic.structure K evaporation Lorentz symmetry breaking Measurements of Type II |
收录类别 | EI ; ESCI |
语种 | 英语 |
出版者 | Springer |
EI入藏号 | 20222112150639 |
EI主题词 | Electronic structure |
EI分类号 | 541.2 Aluminum Alloys ; 711 Electromagnetic Waves ; 921.4 Combinatorial Mathematics, Includes Graph Theory, Set Theory ; 931.3 Atomic and Molecular Physics |
原始文献类型 | Article in Press |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/187916 |
专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_柳仲楷组 物质科学与技术学院_特聘教授组_陈宇林 物质科学与技术学院_博士生 物质科学与技术学院_公共科研平台_拓扑物理实验室 |
通讯作者 | Liu, Zhong-Kai |
作者单位 | 1.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China; 2.University of Chinese Academy of Sciences, Beijing; 100049, China; 3.ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai; 201210, China; 4.Max Planck Institute of Microstructure Physics, Halle; 06120, Germany; 5.National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei; 230029, China; 6.Department of Physics, University of Oxford, Oxford; OX1 3PU, United Kingdom |
第一作者单位 | 物质科学与技术学院 |
通讯作者单位 | 物质科学与技术学院; 上海科技大学 |
第一作者的第一单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Fang, Hong-Wei,Liang, Ai-Ji,Schröter, Niels B. M.,et al. Measurement of the electronic structure of a type-II topological Dirac semimetal candidate VAl3 using angle-resolved photoelectron spectroscopy[J]. TUNGSTEN,2022,5(3):332-338. |
APA | Fang, Hong-Wei,Liang, Ai-Ji,Schröter, Niels B. M.,Cui, Sheng-Tao,Liu, Zhong-Kai,&Chen, Yu-Lin.(2022).Measurement of the electronic structure of a type-II topological Dirac semimetal candidate VAl3 using angle-resolved photoelectron spectroscopy.TUNGSTEN,5(3),332-338. |
MLA | Fang, Hong-Wei,et al."Measurement of the electronic structure of a type-II topological Dirac semimetal candidate VAl3 using angle-resolved photoelectron spectroscopy".TUNGSTEN 5.3(2022):332-338. |
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