Abnormal strain in suspended GeSn microstructures

doi:10.1088/2053-1591/aaafec

	Abnormal strain in suspended GeSn microstructures
	Han, Yi 1,2; Song, Yuxin 1; Chen, Xiren 4; Zhang, Zhenpu1,3 ; Liu, Juanjuan 1,2; Li, Yaoyao 1; Zhu, Zhongyunshen1,3 ; Huang, Hua 1; Shao, Jun 4; Wang, Shumin1,3,5
	2018-03
发表期刊	MATERIALS RESEARCH EXPRESS (IF:1.8[JCR-2023],1.9[5-Year])
ISSN	2053-1591
卷号	5 期号:3
发表状态	已发表
DOI	10.1088/2053-1591/aaafec
摘要	A suspended GeSn microstructure is realized by a two-step selective wet etching technique with the aim of fully relaxing the compressive strain, promoting the indirect to direct bandgap transition and improving the optical property of GeSn thin films grown on Ge. The compressive strain was found efficiently relaxed, and even unexpected large tensile strain was displayed on regions of the microstructure by micro-Raman spectroscopy. Residual Ge patches under the suspended GeSn microstructure were found by scanning electron microscopy and proved to be the origin of the tensile strain by finite element method simulations. The tensile strain on the surface is beneficial for direct bandgap conversion and carrier accumulation. Significant enhancement of photoluminescence was obtained in the GeSn microstructures than the original thin film.
关键词	GeSn microstructure FEM mu-Raman strain engineering silicon photonics PL
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	Chinese Academy of Sciences[KGZD-EW-804]
WOS研究方向	Materials Science
WOS类目	Materials Science, Multidisciplinary
WOS记录号	WOS:000426742100001
出版者	IOP PUBLISHING LTD
EI入藏号	20191306681412
EI主题词	Energy gap ; Finite element method ; Microstructure ; Optical properties ; Scanning electron microscopy ; Semiconductor alloys ; Silicon photonics ; Thin films ; Tin alloys ; Wet etching
EI分类号	Tin and Alloys:546.2 ; Light/Optics:741.1 ; Numerical Methods:921.6 ; Mechanics:931.1 ; Materials Science:951
WOS关键词	RAMAN-SCATTERING ; WAVE-GUIDES ; GERMANIUM ; SI ; INTERCONNECTS ; FABRICATION ; ROUTE
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/18296
专题	物质科学与技术学院信息科学与技术学院_特聘教授组_王庶民组物质科学与技术学院_硕士生物质科学与技术学院_博士生
通讯作者	Li, Yaoyao; Wang, Shumin
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100190, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China 5.Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Han, Yi,Song, Yuxin,Chen, Xiren,et al. Abnormal strain in suspended GeSn microstructures[J]. MATERIALS RESEARCH EXPRESS,2018,5(3).
APA	Han, Yi.,Song, Yuxin.,Chen, Xiren.,Zhang, Zhenpu.,Liu, Juanjuan.,...&Wang, Shumin.(2018).Abnormal strain in suspended GeSn microstructures.MATERIALS RESEARCH EXPRESS,5(3).
MLA	Han, Yi,et al."Abnormal strain in suspended GeSn microstructures".MATERIALS RESEARCH EXPRESS 5.3(2018).