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InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice | |
2022-05-01 | |
发表期刊 | IEEE ELECTRON DEVICE LETTERS (IF:4.1[JCR-2023],4.2[5-Year]) |
ISSN | 1558-0563 |
卷号 | 43期号:5页码:757-760 |
发表状态 | 已发表 |
DOI | 10.1109/LED.2022.3162246 |
摘要 | In this work, an In0.53Ga0.47As/GaAs0.5Sb0.5 type-II superlattice(T2SL) based broadband photodetector with an optical spectrum response ranging from 250 nm to 2400 nm is demonstrated. The photodetector shows a low dark current density of $3.48\times 10^{-4}$ A/cm2 under the bias of −1 V and a specific detectivity (D*) of $1.59\times 10^{10}$ cm $\cdot $ Hz1/2/W at $2 ~\mu \text{m}$ at 293 K. A recessed window on the surface of the top P layer was fabricated to enhance the responsivity of ultraviolet (UV) and visible band. The UV and visible band quantum efficiency (QE) can increase by 40% with the recessed window. |
URL | 查看原文 |
收录类别 | EI ; SCIE |
来源库 | IEEE |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/180931 |
专题 | 信息科学与技术学院_硕士生 信息科学与技术学院_PI研究组_陈佰乐组 信息科学与技术学院_PI研究组_邹新波组 信息科学与技术学院_博士生 |
作者单位 | 1.School of Information Science and Technology, Shanghaitech University, Shanghai, China 2.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China 3.Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, Shanghai, China 4.Key Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China |
第一作者单位 | 信息科学与技术学院 |
第一作者的第一单位 | 信息科学与技术学院 |
推荐引用方式 GB/T 7714 | Jingyi Wang,Zhiyang Xie,Liqi Zhu,et al. InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice[J]. IEEE ELECTRON DEVICE LETTERS,2022,43(5):757-760. |
APA | Jingyi Wang.,Zhiyang Xie.,Liqi Zhu.,Xinbo Zou.,Xuyi Zhao.,...&Baile Chen.(2022).InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice.IEEE ELECTRON DEVICE LETTERS,43(5),757-760. |
MLA | Jingyi Wang,et al."InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice".IEEE ELECTRON DEVICE LETTERS 43.5(2022):757-760. |
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