Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates

doi:10.1049/iet-opt.2017.0078

	Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates
	Burguete, Claudia Gonzalez 1; Guo, Daqian 1; Jurczak, Pamela 1; Cui, Fan 1; Tang, Mingchu 1; Chen, Wei2 ; Deng, Zhuo2 ; Chen, Yaojiang2 ; Gutierrez, Marina 3; Chen, Baile2 ; Liu, Huiyun 1; Wu, Jiang 1
	2018-02
发表期刊	IET OPTOELECTRONICS
ISSN	1751-8768
卷号	12 期号:1 页码:2-4
发表状态	已发表
DOI	10.1049/iet-opt.2017.0078
摘要	In this study, p-i-n InAs/GaSb type II superlattice photodiodes were directly grown on silicon substrates. The superlattice structures were grown monolithically on miscut Si substrates via a 10nm AlSb nucleation layer. Interfacial misfit array technique was used to accommodate the large lattice mismatch between III-Sb epi-layers and Si. Atomic force microscopy and X-ray diffraction measurements revealed degraded material quality of type II superlattices grown on Si, compared with the sample grown on GaAs. Photoluminescence characterisation indicates comparable optical properties with about 39% deduction of peak intensity. Dark current measurements were also used to study the electrical properties of the samples.
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收录类别	SCI ; SCIE ; EI
语种	英语
WOS研究方向	Engineering ; Optics ; Telecommunications
WOS类目	Engineering, Electrical & Electronic ; Optics ; Telecommunications
WOS记录号	WOS:000419927300002
出版者	INST ENGINEERING TECHNOLOGY-IET
EI入藏号	20180304655180
EI主题词	Aluminum compounds ; Atomic force microscopy ; Gallium arsenide ; Gallium compounds ; Indium antimonides ; Indium arsenide ; Indium compounds ; Lattice mismatch ; Optical properties ; Photodegradation ; Photodiodes ; Semiconductor quantum wells ; Silicon ; Silicon on insulator technology ; Substrates ; X ray diffraction
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Crystal Lattice:933.1.1
WOS关键词	PHOTODETECTORS ; EPITAXY ; GASB
原始文献类型	Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/16297
专题	信息科学与技术学院_PI研究组_陈佰乐组信息科学与技术学院信息科学与技术学院_硕士生信息科学与技术学院_博士生
通讯作者	Wu, Jiang
作者单位	1.UCL, Dept Elect & Elect Engn, London WC1E 7JE, England 2.Shanghai Tech Univ, Sch Informat Sci & Technol, Shanghai, Peoples R China 3.Univ Cadiz, Dept Mat Sci & Met Engn, Cadiz 11510, Spain
推荐引用方式 GB/T 7714	Burguete, Claudia Gonzalez,Guo, Daqian,Jurczak, Pamela,et al. Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates[J]. IET OPTOELECTRONICS,2018,12(1):2-4.
APA	Burguete, Claudia Gonzalez.,Guo, Daqian.,Jurczak, Pamela.,Cui, Fan.,Tang, Mingchu.,...&Wu, Jiang.(2018).Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates.IET OPTOELECTRONICS,12(1),2-4.
MLA	Burguete, Claudia Gonzalez,et al."Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates".IET OPTOELECTRONICS 12.1(2018):2-4.