Designing EDA-Compatible Cryogenic CMOS Platform for Quantum Computing Applications

doi:10.1109/EDTM50988.2021.9420957

	Designing EDA-Compatible Cryogenic CMOS Platform for Quantum Computing Applications
	Zewei Wang1 ; Chengwei Cao 2; Puqing Yang 3; Yumeng Yuan1 ; Zhidong Tang1 ; Renhe Chen1 ; Weican Wu 2; Xin Luo 2; Ao Guo 2; Liujiang Yu 4; Ganbing Shang 4; Zhaofeng Zhang 3; Shaojian Hu 2; Xufeng Kou1
	2021
会议录名称	2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM)
发表状态	已发表
DOI	10.1109/EDTM50988.2021.9420957
摘要	This paper presents the temperature-dependent characterizations and compact modeling on both the front-end-of-line (FEOL) and back-end-of-line (BEOL) devices based on the HLMC 40-nm low-power CMOS technology. Moreover, an EDA-compatible cryo-CMOS platform which covers the 10 K < T < 298 K region is developed to guide the design of specific cryogenic integrated circuits for quantum computing applications.
会议录编者/会议主办者	IEEE
关键词	cryogenic CMOS compact modeling cryo-SRAM cryo-LNA quantum computing
会议名称	5th IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
会议地点	Chengdu, PEOPLES R CHINA
会议日期	APR 08-11, 2021
URL	查看原文
收录类别	CPCI-S ; EI ; CPCI
语种	英语
WOS记录号	WOS:000675595800143
出版者	IEEE
原始文献类型	Proceedings Paper
来源库	IEEE
引用统计	正在获取...
文献类型	会议论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/127949
专题	信息科学与技术学院_硕士生信息科学与技术学院_PI研究组_寇煦丰组信息科学与技术学院_博士生
作者单位	1.Information of Science and Technology, ShanghaiTech University, Shanghai, China 2.Shanghai IC Research and Development Center, Shanghai, China 3.Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, China 4.Huali Microelectronics Corporation (HLMC), Shanghai, China
第一作者单位	上海科技大学
第一作者的第一单位	上海科技大学
推荐引用方式 GB/T 7714	Zewei Wang,Chengwei Cao,Puqing Yang,et al. Designing EDA-Compatible Cryogenic CMOS Platform for Quantum Computing Applications[C]//IEEE:IEEE,2021.