上海科技大学知识管理系统

本发明提供了一种双异质结单极性晶体管的器件结构，其特征在于，采用单极性输运的垂直器件结构，包括竖直布置的发射区、基区以及集电区，基区位于发射区及集电区之间，发射区与集电区可互换，发射区以及集电区采用AlGaN材料，基区采用GaN材料，基区的GaN材料与发射区及集电区的AlGaN材料形成两个背对背的肖特基结，从而形成AlGaN//GaN//AlGaN双异质结结构；发射极、基极以及集电极分别与发射区、基区以及集电区相连。本发明公开的是一种基于双异质结的垂直型器件，可实现常关型器件的特性，同时不易受表面电荷的影响。

The present invention provides a device structure of a dual heterojunction unipolar transistor. The device structure is characterized in that the vertical device structure with unipolar transport is used and comprises a vertically arranged emitting region, a base region and a current collecting region. The base region is located between the emitting region and the current collecting region. The emitting region and the current collecting region are interchangeable. The emitting region and the current collecting region use AlGaN material, and the base region uses GaN material. The GaN material of the base region and the AlGaN material of the emitting region and the current collecting region form two back-to-back Schottky junctions so as to form an AlGaN//GaN//AlGaN dual heterojunction structure. The emitter, the base and the collector are respectively connected with the emitting region, the base region and the current collecting region. According to the vertical device based on the dual heterojunction, the characteristics of the normally-closed device can be realized without influence of surface charge.