Electronic origin of the enhanced thermoelectric efficiency of Cu2Se
2020-11-30
发表期刊SCIENCE BULLETIN
ISSN2095-9273
卷号65期号:22页码:1888-1893
发表状态已发表
DOI10.1016/j.scib.2020.07.007
摘要Thermoelectric materials (TMs) can uniquely convert waste heat into electricity, which provides a potential solution for the global energy crisis that is increasingly severe. Bulk Cu2Se, with ionic conductivity of Cu ions, exhibits a significant enhancement of its thermoelectric figure of merit zT by a factor of similar to 3 near its structural transition around 400 K. Here, we show a systematic study of the electronic structure of Cu2Se and its temperature evolution using high-resolution angle-resolved photoemission spectroscopy. Upon heating across the structural transition, the electronic states near the corner of the Brillouin zone gradually disappear, while the bands near the centre of Brillouin zone shift abruptly towards high binding energies and develop an energy gap. Interestingly, the observed band reconstruction well reproduces the temperature evolution of the Seebeck coefficient of Cu2Se, providing an electronic origin for the drastic enhancement of the thermoelectric performance near 400 K. The current results not only bridge among structural phase transition, electronic structures and thermoelectric properties in a condensed matter system, but also provide valuable insights into the search and design of new generation of thermoelectric materials. (C) 2020 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
关键词Thermoelectric materials Cu2Se Angle-resolved photoemission spectroscopy Seebeck coefficient Band reconstruction
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收录类别SCI ; SCIE ; EI
语种英语
资助项目National Natural Science Foundation of China[11774190][11674229][11634009][11874264] ; National Key R&D Program of China[2017YFA0304600][2017YFA0305400][2017YFA0402900] ; EPSRC Platform Grant[EP/M020517/1] ; Natural Science Foundation of Shanghai[17ZR1443300]
WOS研究方向Science & Technology - Other Topics
WOS类目Multidisciplinary Sciences
WOS记录号WOS:000581061500010
出版者ELSEVIER
引用统计
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/123952
专题物质科学与技术学院_特聘教授组_陈宇林
物质科学与技术学院_PI研究组_柳仲楷组
大科学中心_PI研究组_刘志组
物质科学与技术学院_PI研究组_郭艳峰组
物质科学与技术学院_硕士生
物质科学与技术学院_公共科研平台_拓扑物理实验室
通讯作者Yang, Lexian; Chen, Yulin
作者单位
1.Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
2.Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
4.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
5.Peking Univ, Int Ctr Quantum Mat, Sch Phys, Beijing 100871, Peoples R China
6.ShanghaiTech Lab Topol Phys, Shanghai 200031, Peoples R China
7.Frontier Sci Ctr Quantum Informat, Beijing 100084, Peoples R China
通讯作者单位物质科学与技术学院;  上海科技大学
推荐引用方式
GB/T 7714
Sun, Shucui,Li, Yiwei,Chen, Yujie,et al. Electronic origin of the enhanced thermoelectric efficiency of Cu2Se[J]. SCIENCE BULLETIN,2020,65(22):1888-1893.
APA Sun, Shucui.,Li, Yiwei.,Chen, Yujie.,Xu, Xiang.,Kang, Lu.,...&Chen, Yulin.(2020).Electronic origin of the enhanced thermoelectric efficiency of Cu2Se.SCIENCE BULLETIN,65(22),1888-1893.
MLA Sun, Shucui,et al."Electronic origin of the enhanced thermoelectric efficiency of Cu2Se".SCIENCE BULLETIN 65.22(2020):1888-1893.
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