Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K

doi:10.1109/JEDS.2020.3013656

	Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K
	Yangqian Wang1,2,3 ; Yitian Gu1,2,3 ; Xing Lu 4; Huaxing Jiang 5; Haowen Guo1 ; Baile Chen1 ; Kei May Lau 5; Xinbo Zou1
	2020
发表期刊	IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (IF:2.0[JCR-2023],2.3[5-Year])
ISSN	2168-6734
卷号	8 页码:850-856
发表状态	已发表
DOI	10.1109/JEDS.2020.3013656
摘要	Dynamic characteristics of GaN HEMT grown on a native substrate were systematically investigated at 300K and 150K. Transfer and output characteristics of the GaN HEMT were measured after various off-state stressing conditions and recovery durations. In addition, a high-speed scheme was employed to finish the measurement within $75~\mu \text{s}$ , and to ensure maximum preservation of stressing/recovery consequences. The threshold voltage instability and current collapse commonly observed at room temperature were mostly diminished at 150K, which was attributed to reduced number of electrons through the metal-semiconductor contact and insufficient number of carriers overcoming the capture potential barrier. Two pulsed I-V measurements, including evaluations with various off-state quiescent bias points and “on-the-fly” on-resistance sampling, confirmed an inefficient electron capture process at 150K, with a time constant larger than dozens of seconds. The output characteristic comparison between hard switch and soft switch at 150K provided direct experimental evidence for electron capture promotion by hot carriers.
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收录类别	SCI ; EI ; SCIE
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/122969
专题	信息科学与技术学院_硕士生信息科学与技术学院_PI研究组_陈佰乐组信息科学与技术学院_PI研究组_邹新波组信息科学与技术学院_博士生
作者单位	1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology, Shanghai, China 3.University of Chinese Academy of Sciences, Beijing, China 4.School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China 5.Electronic and Computer Engineering Department, Hong Kong University of Science and Technology, Hong Kong, 999077
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Yangqian Wang,Yitian Gu,Xing Lu,et al. Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K[J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2020,8:850-856.
APA	Yangqian Wang.,Yitian Gu.,Xing Lu.,Huaxing Jiang.,Haowen Guo.,...&Xinbo Zou.(2020).Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,8,850-856.
MLA	Yangqian Wang,et al."Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K".IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 8(2020):850-856.