InP-Based Near Infrared/Extended-Short Wave Infrared Dual-Band Photodetector

doi:10.1109/LPT.2020.3008853

	InP-Based Near Infrared/Extended-Short Wave Infrared Dual-Band Photodetector
	Zongheng Xie1,2,3 ; Zhuo Deng1 ; Xinbo Zou1 ; Baile Chen1
	2020
发表期刊	IEEE PHOTONICS TECHNOLOGY LETTERS (IF:2.3[JCR-2023],2.2[5-Year])
ISSN	1941-0174
卷号	32 期号:16
发表状态	已发表
DOI	10.1109/LPT.2020.3008853
摘要	In this paper, InP based near infrared (NIR) /extended-short wave infrared (eSWIR) dual-band photodetector with In0.53 Ga0.47 As and In0.53 Ga0.47 As/GaAs0.5 Sb0.5 type-II superlattice (T2SL) back-to-back n-i-p/p-i-n structures is demonstrated. Monolithic growth of NIR/eSWIR dual-band photodetector on InP substrate enjoys the benefit of the lattice matched property of InP/InGaAs/GaAsSb material system. Low optical crosstalk (below −10 dB) between the two sub-detector is achieved for wavelength range out of 1690–1750 nm. At room temperature, the device exhibits a dark current density of $1.26\times 10 ^{\mathbf {-5}}$ A/cm2 for In0.53 Ga0.47 As sub-detector under −0.1 V bias and $3.78\times 10 ^{\mathbf {-2}}$ A/cm2 for In0.53 Ga0.47 As/GaAs0.5 Sb0.5 sub-detector under −1 V bias. The corresponding responsivity and specific detectivity are 0.57 A/W and $2.63\times 10 ^{\mathbf {11}}$ cm $\cdot $ Hz $^{\mathbf {1/2}}$ /W at 1640 nm for NIR sub-detector and 0.22 A/W and $1.96\times 10 ^{\mathbf {9}}$ cm $\cdot $ Hz1/2/W at $2~\mu \text{m}$ for eSWIR sub-detector, respectively. The characterization results show the potential for monolithically growing dual-band SWIR photodetector on InP substrate with low dark current density for SWIR applications.
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收录类别	SCI ; SCIE ; EI
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/122177
专题	信息科学与技术学院_硕士生信息科学与技术学院_PI研究组_陈佰乐组信息科学与技术学院_PI研究组_邹新波组
作者单位	1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China 3.University of Chinese Academy of Sciences, Beijing, China
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Zongheng Xie,Zhuo Deng,Xinbo Zou,et al. InP-Based Near Infrared/Extended-Short Wave Infrared Dual-Band Photodetector[J]. IEEE PHOTONICS TECHNOLOGY LETTERS,2020,32(16).
APA	Zongheng Xie,Zhuo Deng,Xinbo Zou,&Baile Chen.(2020).InP-Based Near Infrared/Extended-Short Wave Infrared Dual-Band Photodetector.IEEE PHOTONICS TECHNOLOGY LETTERS,32(16).
MLA	Zongheng Xie,et al."InP-Based Near Infrared/Extended-Short Wave Infrared Dual-Band Photodetector".IEEE PHOTONICS TECHNOLOGY LETTERS 32.16(2020).