Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4
2019-11-21
发表期刊PHYSICAL REVIEW X
ISSN2160-3308
卷号9期号:4
发表状态已发表
DOI10.1103/PhysRevX.9.041040
摘要The intrinsic magnetic topological insulator MnBi2Te4 exhibits rich topological effects such as quantum anomalous Hall effect and axion electrodynamics. Here, by combining the use of synchrotron and laser light sources, we carry out comprehensive and high-resolution angle-resolved photoemission spectroscopy studies on MnBi2Te4 and clearly identify its topological electronic structure. In contrast to theoretical predictions and previous studies, we observe topological surface states with diminished gap forming a characteristic Dirac cone. We argue that the topological surface states are mediated by multidomains of different magnetization orientations. In addition, the temperature evolution of the energy bands clearly reveals their interplay with the magnetic phase transition by showing interesting differences between the bulk and surface states, respectively. The investigation of the detailed electronic structure of MnBi2Te4 and its temperature evolution provides important insight into not only the exotic properties of MnBi2Te4, but also the generic understanding of the interplay between magnetism and topological electronic structure in magnetic topological quantum materials.
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收录类别SCI ; SCIE ; EI
语种英语
资助项目Shanghai Pujiang Program[17PJ1406200]
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000498062600003
出版者AMER PHYSICAL SOC
EI入藏号20200408065673
EI主题词Bismuth compounds ; Electric insulators ; Electronic structure ; Light sources ; Manganese compounds ; Photoelectron spectroscopy ; Quantum Hall effect ; Surface states ; Tellurium compounds ; Topological insulators
EI分类号Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4 ; Classical Physics; Quantum Theory; Relativity:931
WOS关键词REALIZATION
原始文献类型Article
引用统计
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/102259
专题物质科学与技术学院_PI研究组_郭艳峰组
物质科学与技术学院_PI研究组_柳仲楷组
物质科学与技术学院_特聘教授组_陈宇林
物质科学与技术学院_硕士生
物质科学与技术学院_公共科研平台_拓扑物理实验室
大科学中心_公共科研平台_大科学装置建设部
通讯作者Liu, Z. K.
作者单位
1.Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
3.CAS Shanghai Sci Res Ctr, Shanghai 201210, Peoples R China
4.Chinese Acad Sci, Ctr Excellence Superconducting Elect, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
5.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
6.Univ Oxford, Dept Phys, Clarendon Lab, Parks Rd, Oxford OX1 3PU, England
7.Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Hunan, Peoples R China
8.Tsinghua Univ, Sch Mat Sci & Engn, Beijing 10084, Peoples R China
9.Tsinghua Univ, Dept Mech Engn, Beijing 100084, Peoples R China
10.Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China
11.Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
12.Diamond Light Source, Harwell Campus, Didcot OX11 0DE, Oxon, England
13.Frontier Sci Ctr Quantum Informat, Beijing 100084, Peoples R China
14.RIKEN, CEMS, Wako, Saitama 3510198, Japan
通讯作者单位物质科学与技术学院
推荐引用方式
GB/T 7714
Chen, Y. J.,Xu, L. X.,Li, J. H.,et al. Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4 [J]. PHYSICAL REVIEW X,2019,9(4).
APA Chen, Y. J..,Xu, L. X..,Li, J. H..,Li, Y. W..,Zhang, C. F..,...&Chen, Y. L..(2019).Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4 .PHYSICAL REVIEW X,9(4).
MLA Chen, Y. J.,et al."Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4 ".PHYSICAL REVIEW X 9.4(2019).
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