Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

doi:10.1063/1.5005970

	Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy
	Zhang, Z. P.1,2,3 ; Song, Y. X.1; Li, Y. Y.1; Wu, X. Y.1,3,5,6; Zhu, Z. Y. S.1,2 ; Han, Y.1,3; Zhang, L. Y.1; Huang, H.1; Wang, S. M.1,2,4
	2017-10
发表期刊	AIP ADVANCES (IF:1.4[JCR-2023],1.4[5-Year])
ISSN	2158-3226
卷号	7 期号:10
发表状态	已发表
DOI	10.1063/1.5005970
摘要	GeSn alloy with 7.68% Sn concentration grown by molecular beam epitaxy has been rapidly annealed at different temperatures from 300 degrees C to 800 degrees C. Surface morphology and roughness annealed below or equal to 500 degrees C for 1 min have no obvious changes, while the strain relaxation rate increasing. When the annealing temperature is above or equal to 600 degrees C, significant changes occur in surface morphology and roughness, and Sn precipitation is observed at 700 degrees C. The structural properties are analyzed by reciprocal space mapping in the symmetric (004) and asymmetric (224) planes by high resolution X-ray diffraction. The lateral correlation length and the mosaic spread are extracted for the epi-layer peaks in the asymmetric (224) diffraction. The most suitable annealing temperature to improve both the GeSn lattice quality and relaxation rate is about 500 degrees C. (C) 2017 Author(s).
收录类别	SCI ; EI
语种	英语
资助项目	Creative Research Group Project of Natural Science Foundation of China[61321492]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000414246100020
出版者	AMER INST PHYSICS
EI入藏号	20174504364365
EI主题词	Epitaxial growth ; Molecular beam epitaxy ; Molecular beams ; Strain rate ; Structural properties ; Surface morphology ; Surface roughness ; Tin ; X ray diffraction
EI分类号	Structural Design:408 ; Heat Treatment Processes:537.1 ; Tin and Alloys:546.2 ; Chemical Operations:802.3 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Atomic and Molecular Physics:931.3 ; Materials Science:951
WOS关键词	ALLOYS ; SN ; IMPROVEMENT ; LAYERS ; SI
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/10030
专题	物质科学与技术学院信息科学与技术学院_特聘教授组_王庶民组物质科学与技术学院_硕士生物质科学与技术学院_博士生
通讯作者	Song, Y. X.; Wang, S. M.
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Chinese Acad Sci, Beijing 100190, Peoples R China 4.Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden 5.Shanghai Jiao Tong Univ, State Key Lab Adv Opt Commun Syst & Networks, Shanghai Key Lab Nav & Locat Based Serv, Shanghai 200240, Peoples R China 6.Shanghai Jiao Tong Univ, Ctr Quantum Informat Sensing & Proc, Shanghai 200240, Peoples R China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zhang, Z. P.,Song, Y. X.,Li, Y. Y.,et al. Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy[J]. AIP ADVANCES,2017,7(10).
APA	Zhang, Z. P..,Song, Y. X..,Li, Y. Y..,Wu, X. Y..,Zhu, Z. Y. S..,...&Wang, S. M..(2017).Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy.AIP ADVANCES,7(10).
MLA	Zhang, Z. P.,et al."Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy".AIP ADVANCES 7.10(2017).