Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge

doi:10.1364/OE.25.028817

	Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge
	Zhou, Yue-Guang1,2 ; Zhou, Cheng 2; Cao, Chun-Fang 3; Du, Jiang-Bing 2; Gong, Qian3 ; Wang, Cheng1
	2017-11-13
发表期刊	OPTICS EXPRESS (IF:3.2[JCR-2023],3.4[5-Year])
ISSN	1094-4087
卷号	25 期号:23 页码:28817-28824
发表状态	已发表
DOI	10.1364/OE.25.028817
摘要	We report the relative intensity noise (RIN) characteristics of an InAs quantum dot (Qdot) laser epitaxially grown on the Ge substrate. It is found that the minimum RIN of the Ge-based Qdot laser is around -120 dB/Hz, which is 15 dB higher than that of a native GaAs-based Qdot laser with the same layer structure. The higher RIN in the Ge-based laser can be attributed to the high-density epitaxial defects of threading dislocations and antiphase domain boundaries. (C) 2017 Optical Society of America
收录类别	SCI ; EI
语种	英语
资助项目	National Natural Science Foundation of China (NSFC)[61675128]
WOS研究方向	Optics
WOS类目	Optics
WOS记录号	WOS:000415136700073
出版者	OPTICAL SOC AMER
EI入藏号	20174604407538
EI主题词	Gallium arsenide ; Germanium ; Germanium compounds ; Indium arsenide ; Indium compounds ; Nanocrystals ; Quantum dot lasers ; Semiconductor quantum dots
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Semiconductor Lasers:744.4.1 ; Nanotechnology:761 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2
WOS关键词	SEMICONDUCTOR-LASERS ; MODULATION RESPONSE ; LOW-THRESHOLD ; SI ; PERFORMANCE ; SENSITIVITY ; DIODE ; GAAS
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/10026
专题	信息科学与技术学院信息科学与技术学院_PI研究组_王成组信息科学与技术学院_特聘教授组_龚谦组信息科学与技术学院_硕士生
通讯作者	Gong, Qian
作者单位	1.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China 2.Shanghai Jiao Tong Univ, Dept Elect Engn, State Key Lab Adv Opt Commun Syst & Networks, Shanghai 200240, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Zhou, Yue-Guang,Zhou, Cheng,Cao, Chun-Fang,et al. Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge[J]. OPTICS EXPRESS,2017,25(23):28817-28824.
APA	Zhou, Yue-Guang,Zhou, Cheng,Cao, Chun-Fang,Du, Jiang-Bing,Gong, Qian,&Wang, Cheng.(2017).Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge.OPTICS EXPRESS,25(23),28817-28824.
MLA	Zhou, Yue-Guang,et al."Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge".OPTICS EXPRESS 25.23(2017):28817-28824.