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	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文 POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11 作者: Yitai zhu; Haitao Du; Yu Zhang; Haolan Qu; Haodong Jiang Microsoft Word(2182Kb) \| 收藏 \| 浏览/下载：81/1 \| 提交时间：2025/03/07 Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
	In situ Detection of the Molecule-Crowded Aqueous Electrode-Electrolyte Interface 期刊论文 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2025, 卷号: 147, 期号: 13 作者: Wei, Shiqiang; Shou, Hongwei; Qi, Zheng-Hang; Chen, Shuangming; Han, Yong Adobe PDF(12124Kb) \| 收藏 \| 浏览/下载：54/3 \| 提交时间：2025/03/31 Anode materials Gallium compounds Synchrotron radiation Ultrahigh vacuum Ambient pressures Aqueous environment Electrochemicals Electrode-electrolyte interfaces Energy In-situ detections Interface chemistry Metal anodes X-ray photoelectrons Zn deposition
	Pressure-regulated bandgap narrowing and photoelectric activity enhancement in layered halide compound GeI2 期刊论文 JOURNAL OF APPLIED PHYSICS, 2025, 卷号: 137, 期号: 8, 页码: 085902 作者: Li, Zhongyang; Wang, Yiming; Zeng, Xiaohui; Zhou, Shuo; Zhu, Zhikai Adobe PDF(3663Kb) \| 收藏 \| 浏览/下载：284/6 \| 提交时间：2025/03/14 Carrier concentration - Gallium compounds - Germanium alloys - Germanium oxides - Heterojunctions - Luminescent devices - Photodetectors - Photoelectricity - Semiconducting indium phosphide - Van der Waals forces - Wide band gap semiconductors Activity enhancement - Band gap narrowing - Halide compounds - Heterojunction devices - Light-matter interactions - Photoelectrics - Spectral response - Van Der Waals interactions - Weak interlayers - Wide-band-gap
	Silicon-integrated scandium-doped aluminum nitride electro-optic modulator 期刊论文 PHOTONICS RESEARCH, 2025, 卷号: 13, 期号: 2, 页码: 477-487 作者: Xu, Tianqi; Liu, Yushuai; Pu, Yuanmao; Yang, Yongxiang; Zhong, Qize Adobe PDF(1147Kb) \| 收藏 \| 浏览/下载：394/5 \| 提交时间：2024/06/24 Aluminum gallium nitride - Amplitude shift keying - CMOS integrated circuits - Digital filters - Electrooptical devices - Fiber optic sensors - Frequency shift keying - Indium phosphide - Light modulation - Light modulators - Notch filters - Phase shift keying - Photonic integrated circuits - Photonic integration technology - Ring lasers - Scandium compounds - Semiconducting aluminum compounds - Semiconducting indium phosphide - Signal modulation - Silicon nitride Electro-optic modulators - Electro-optics - Fabrication and characterizations - Functional devices - Hexagonal wurtzite structure - Nonlinear properties - Photonic circuits - Piezoelectric property - Seamless integration - Second orders
	Tunable interfacial Rashba spin-orbit coupling in asymmetric AlxIn1−xSb/InSb/CdTe quantum well heterostructures 期刊论文 APPLIED PHYSICS LETTERS, 2025, 卷号: 126, 期号: 1 作者: Zhi, Zhenghang; Wu, Yuyang; Ruan, Hanzhi; Liu, Jiuming; Huang, Puyang Adobe PDF(2896Kb) \| 收藏 \| 浏览/下载：125/12 \| 提交时间：2025/02/12 Cadmium alloys Cadmium telluride Gallium phosphide Heterodyning Heterojunctions Indium phosphide Narrow band gap semiconductors Selenium compounds Semiconducting aluminum compounds Semiconducting antimony compounds Semiconducting cadmium compounds Semiconducting gallium compounds Semiconducting indium phosphide Semiconductor quantum wells Silicon compounds Spin orbit coupling Spintronics Band bendings CdTe Molecular-beam epitaxy Quantum confinement effects Quantum-well heterostructure Rashba spin-orbit coupling Rashba-type spin-orbit Spin-orbit couplings Tunables Two-dimensional
	Size-Effect Enriched Phase Diagram in p-Type Skutterudite Superconductor Ir_3.8Sb₁₂ 期刊论文 INORGANIC CHEMISTRY, 2025, 卷号: 64, 期号: 5, 页码: 2276-2281 作者: Wang, Junjie; Liu, Xu; Pei, Cuiying; Qi, Yanpeng; Guo, Jian-gang Adobe PDF(3831Kb) \| 收藏 \| 浏览/下载：73/3 \| 提交时间：2025/02/12 Antimony alloys Gallium compounds Iridium compounds Semiconducting antimony Semiconducting antimony compounds Superconducting materials Critical pressures Filled skutterudites In-situ synchrotrons Lower critical P-type P-type skutterudite Rattling phonons Situ synchrotron X-ray diffractions Sizes effect Structural evolution
	Giant Domain Wall Anomalous Hall Effect in a Layered Antiferromagnet EuAl2Si2 期刊论文 PHYSICAL REVIEW LETTERS, 2024, 卷号: 133, 期号: 21 作者: Xia, Wei; Bai, Bo Adobe PDF(1567Kb) \| 收藏 \| 浏览/下载：321/20 \| 提交时间：2024/12/13 Antiferromagnetism Europium alloys Gallium compounds Hall effect devices Magnetization reversal Surface discharges Anomalous hall effects Antiferromagnets External magnetic field Hall conductivity Noncollinear spin structures Skew scattering Spontaneous magnetization Stripe structure Symmetry breakings Time reversal symmetries
	p-Type AgAuSe Quantum Dots 期刊论文 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2024, 卷号: 146, 期号: 46, 页码: 31799-31806 作者: Tang, Zhiyong; Wang, Zhixuan; Yang, Hongchao; Ma, Zhiwei; Zhang, Yejun Adobe PDF(7159Kb) \| 收藏 \| 浏览/下载：176/2 \| 提交时间：2024/11/28 Aluminum arsenide Atomic emission spectroscopy Gallium compounds Heterojunctions Mercury amalgams Nanocrystals Semiconducting indium phosphide Semiconductor doping Ultraviolet photoelectron spectroscopy X ray photoelectron spectroscopy Device application Doping strategies First principle calculations Level shift Metal free Optoelectronics devices P-type P/n homojunctions Toxic heavy metals X-ray photoelectrons
	Large Nernst effect in a layered metallic antiferromagnet EuAl₂Si₂ 期刊论文 APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 17 作者: Yang, Kunya; Xia, Wei; Mi, Xinrun; Zhang, Yiyue; Zhang, Long Adobe PDF(3262Kb) \| 收藏 \| 浏览/下载：1189/64 \| 提交时间：2024/11/04 Aluminum compounds Antiferromagnetism Europium alloys Europium compounds Fermi level Gallium compounds Thermoelectric refrigeration Thermoelectricity Antiferromagnets Electrons and holes High mobility Metallics Nernst effect Nernst signal Seebeck Single components Thermoelectric devices Thermoelectric generators
	Voltage-Controlled Anisotropic Magnetoresistance in Ferromagnetic-Piezoelectric Heterostructures 会议论文 2024 IEEE INTERNATIONAL MAGNETIC CONFERENCE - SHORT PAPERS (INTERMAG SHORT PAPERS), Rio de Janeiro, Brazil, 5-10 May 2024 作者: Yuxi Wang; Mingye Du; Jiawei Li; Daozheng Luo; Tao Wu Adobe PDF(327Kb) \| 收藏 \| 浏览/下载：354/6 \| 提交时间：2024/07/08 Aluminum compounds Anisotropy Boron compounds Ferromagnetism Gallium compounds Iron compounds Magnetoresistance Piezoelectricity AMR Applied voltages Ferromagnetic-piezoelectric heterostructure Ferromagnetics Magnetic-field Magneto resistive sensors Magnetoresistive sensors Performance Piezoelectric Voltage-controlled

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