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物质科学与技术学院 [13]

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	Ferroelectricity with concomitant Coulomb screening in van der Waals heterostructures 期刊论文 NATURE NANOTECHNOLOGY, 2025 作者: Niu, Ruirui; Li, Zhuoxian; Han, Xiangyan; Qu, Zhuangzhuang; Liu, Qianling Adobe PDF(1513Kb) \| 收藏 \| 浏览/下载：99/3 \| 提交时间：2025/02/12 Boron nitride Conductive materials Coulomb blockade Coulomb interactions Gold compounds Graphene devices III-V semiconductors Interfaces (materials) Layered semiconductors Molybdenum compounds Monolayers Multilayers Organic superconducting materials Single crystals Superlattices Tungsten compounds Bilayer Graphene Coulomb screening Graphenes Non-centrosymmetric Non-polar Stackings Stringent requirement Synaptic response Topological currents Van der Waal
	Deterministic Synthesis of a Two-Dimensional MAPbI₃ Nanosheet and Twisted Structure with Moire Superlattice 期刊论文 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2024, 卷号: 146, 期号: 40, 页码: 27861-27870 作者: Zhang, Shuchen; Ma, Ke; Yuan, Biao; Yang, Jiaqi; Lu, Yuan Adobe PDF(13702Kb) \| 收藏 \| 浏览/下载：278/2 \| 提交时间：2024/10/14 Carrier concentration Crystal atomic structure Crystal symmetry High resolution transmission electron microscopy Selenium compounds Semiconducting bismuth compounds Semiconducting tellurium compounds Superlattices 'current Controlled thickness Deterministics Halide perovskites Innovative method Interfacial interaction Interlayer interactions Intrinsic surfaces Two-dimensional Ultra-thin
	Interfacial characterization of InAs/GaSb superlattices grown by MOCVD at different growth temperatures 期刊论文 MICRO AND NANOSTRUCTURES, 2023, 卷号: 180 作者: Li, Meng; Zhu, Hong; Zhu, He; Liu, Jiafeng; Huai, Yunlong Adobe PDF(6082Kb) \| 收藏 \| 浏览/下载：427/0 \| 提交时间：2023/06/02 Antimony compounds Gallium arsenide Growth temperature III-V semiconductors Indium antimonides Indium arsenide Semiconducting gallium Transmission electron microscopy High-angle annular dark fields High-angle annular dark-field imaging InAs/GaSb superlattices Interfacial characterization Interfacial qualities Interfacial structures Metal-organic chemical vapour depositions Scanning transmission electron microscopes Strain-balanced Structure features
	Growth and characterization of InAsP/InAsSb superlattices by Metal Organic Chemical Vapor Deposition for mid-wavelength detection 期刊论文 JOURNAL OF INFRARED AND MILLIMETER WAVES, 2022, 卷号: 41, 期号: 6, 页码: 995-1001 作者: Huai Yun-Long; Zhu Hong; Zhu He; Liu Jia-Feng; Li Meng Adobe PDF(2178Kb) \| 收藏 \| 浏览/下载：184/0 \| 提交时间：2023/03/10 metal organic chemical vapor deposition (MOCVD) InAsP/InAsSb superlattices mid-wavelength infrared Energy gap III-V semiconductors Indium arsenide Industrial chemicals Infrared devices Infrared radiation Lattice mismatch Light absorption Metallorganic chemical vapor deposition Morphology Organometallics Surface morphology Temperature Absorption material Cutoff wavelengths Free strains InAsP/inassb superlattix K-p method Metal organic chemical vapor deposition （MOCVD） Metal-organic chemical vapour depositions Mid-wavelength infrared Strain-balanced Wavelength detection
	MWIR InAs/InAsSb type-II Superlattice Photodetector for High-Speed Operation 会议论文 2022 IEEE PHOTONICS CONFERENCE (IPC), Vancouver, BC, Canada, 13-17 Nov. 2022 作者: Dai, Zhecheng; Huang, Jian; Chen, Baile Microsoft Word(370Kb) \| 收藏 \| 浏览/下载：164/0 \| 提交时间：2023/03/10 high speed mid-wavelength InAs/InAsSb type-II superlattices uni-traveling carrier photodetectors
	Short wavelength infrared InPSb/InAs superlattice photodiode grown by metalorganic chemical vapor deposition 期刊论文 PHYSICA SCRIPTA, 2022, 卷号: 97, 期号: 3 作者: Zhu, Hong; Zhu, He; Liu, Jiafeng; Hao, Xiujun; Teng, Yan Adobe PDF(977Kb) \| 收藏 \| 浏览/下载：225/0 \| 提交时间：2022/03/07 InPSb InAs superlattices short wavelength infrared photodetector metalorganic chemical vapor deposition
	Tuning the optical response of long-wavelength InAs/GaSb Type-II superlattices infrared focal plane arrays with multi-coatings 期刊论文红外与毫米波学报, 2022, 卷号: 41, 期号: 1, 页码: 248-252 作者: Shi, Rui; Zhou, Jian; Bai, Zhi-Zhong; Xu, Zhi-Cheng; Zhou, Yi Adobe PDF(965Kb) \| 收藏 \| 浏览/下载：266/0 \| 提交时间：2022/03/25 Antimony compounds II-VI semiconductors III-V semiconductors Indium antimonides Zinc coatings Cutoff wavelengths Focal-plane arrays Germaniums (Ge) InAs/GaSb Long wavelength Multi coating Optical response Tunable response Tunables Type-II superlattices
	High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD 期刊论文 JOURNAL OF SEMICONDUCTORS, 2022, 卷号: 43, 期号: 1 作者: Hao, Xiujun; Teng, Yan; Zhu, He; Liu, Jiafeng; Zhu, Hong Adobe PDF(458Kb) \| 收藏 \| 浏览/下载：370/0 \| 提交时间：2022/02/13 Aluminum Antimony compounds Gallium compounds Heterojunctions III-V semiconductors Indium antimonides Indium arsenide Infrared radiation Lattice mismatch Organic chemicals Organometallics Photodetectors Photons Temperature Aluminum-free Cutoff wavelengths High operating temperature High resolution xray diffraction (XRD) High-crystalline quality InAs/GaSb superlattices Infrared photodetector Metal-organic chemical vapour depositions MWIR Operating temperature
	Growth and characterization of InGaAs/InAsSb superlattices by metal-organic chemical vapor deposition for mid-wavelength infrared photodetectors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2020, 卷号: 146 作者: Zhu, Hong; Chen, Ying; Zhao, Yu; Li, Xin; Teng, Yan Adobe PDF(838Kb) \| 收藏 \| 浏览/下载：256/3 \| 提交时间：2020/11/02 InGaAs/InAsSb superlattices Mid-wavelength infrared Metal-organic chemical vapor deposition Photoluminescence
	Evaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD 期刊论文 ELECTRONICS LETTERS, 2020, 卷号: 56, 期号: 15, 页码: 785-787 作者: Yan Teng; Xiujun Hao Adobe PDF(472Kb) \| 收藏 \| 浏览/下载：249/0 \| 提交时间：2020/09/01 MOCVD dark conductivity minority carriers infrared detectors semiconductor superlattices semiconductor growth III-V semiconductors indium compounds gallium compounds etching current density photodetectors photoconductivity carrier lifetime lateral diffusion length minority carriers metalorganic chemical vapour deposition diffusion-limited behaviour dark current density shallow-etched pixels photocurrent size-dependent behaviour superlattice materials MOCVD LWIR InAs-GaSb superlattice detectors deeply-etched PNn device temperature 80 0 K voltage-0 1 V InAs-GaSb

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