Evaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD

doi:10.1049/el.2020.1076

	Evaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD
	Yan Teng 1; Xiujun Hao2 ; Yu Zhao 3; Qihua Wu 3; Xin Li 3; Jiafeng Liu 4; He Zhu 1; Ying Chen 1; Hong Zhu 4; Yong Huang 1
	2020-07-23
发表期刊	ELECTRONICS LETTERS (IF:0.7[JCR-2023],0.9[5-Year])
ISSN	0013-5194
EISSN	1350-911X
卷号	56 期号:15 页码:785-787
发表状态	已发表
DOI	10.1049/el.2020.1076
摘要	The lateral diffusion length (Lh) of minority carriers in LWIR InAs/GaSb superlattice detectors grown by metalorganic chemical vapour deposition was evaluated. The deeply-etched PNn device exhibits a diffusion-limited behaviour at 80 K, with a dark current density as low as 9.1 × 10−6 A/cm2 at −0.1 V and a 50% cut-off of 10.1 μm. In shallow-etched pixels with a common absorber, both the photo-current and the dark current show a size-dependent behaviour. Lh deduced from the two methods are 211 and 251 μm, respectively, which are longer than those in superlattice materials grown by molecular beam epitaxy.
关键词	MOCVD dark conductivity minority carriers infrared detectors semiconductor superlattices semiconductor growth III-V semiconductors indium compounds gallium compounds etching current density photodetectors photoconductivity carrier lifetime lateral diffusion length minority carriers metalorganic chemical vapour deposition diffusion-limited behaviour dark current density shallow-etched pixels photocurrent size-dependent behaviour superlattice materials MOCVD LWIR InAs-GaSb superlattice detectors deeply-etched PNn device temperature 80 0 K voltage-0 1 V InAs-GaSb
URL	查看原文
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	Natural Science Foundation of China[61874179][61804161]
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:000555007400017
出版者	INST ENGINEERING TECHNOLOGY-IET
原始文献类型	Journals
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/122948
专题	物质科学与技术学院_硕士生物质科学与技术学院_博士生
作者单位	1.School of Nano-Technology and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China 2.School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China 3.Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, Jiangsu Province 215123, People's Republic of China 4.Nano Science and Technology Institute, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
推荐引用方式 GB/T 7714	Yan Teng,Xiujun Hao,Yu Zhao,et al. Evaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD[J]. ELECTRONICS LETTERS,2020,56(15):785-787.
APA	Yan Teng.,Xiujun Hao.,Yu Zhao.,Qihua Wu.,Xin Li.,...&Yong Huang.(2020).Evaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD.ELECTRONICS LETTERS,56(15),785-787.
MLA	Yan Teng,et al."Evaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD".ELECTRONICS LETTERS 56.15(2020):785-787.