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Synthesis and structures of Ln(III) 12-crown-4 complexes (Ln = La, Ce, Nd)
期刊论文
POLYHEDRON, 2025, 卷号: 275
作者:
He, Miao
;
Gu, Ziyi
;
Li, Jun
;
Li, Yangjuan
;
Gong, Yu
Adobe PDF(1367Kb)
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收藏
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浏览/下载:4/1
|
提交时间:2025/04/25
Cerium compounds
Lanthanum compounds
Neodymium compounds
Nuclear magnetic resonance
Nuclear magnetic resonance spectroscopy
X ray diffraction analysis
Crown-ethers
H NMR spectra
Half-sandwich
IR-spectroscopy
NMR spectrum
NMR-spectroscopy
Paramagnetic
Sandwich types
X- ray diffractions
X-ray structure
Elucidating Raman Auger Behavior in Cu, Cu
2
O and CuO by Resonant Auger Electron Spectroscopy to Interpret X-ray Absorption Spectroscopy
期刊论文
SMALL METHODS, 2025
作者:
Zhang, Hui
;
Zhou, Jing
;
Li, Xiaobao
;
Han, Yong
;
Zhang, Nian
Adobe PDF(2908Kb)
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浏览/下载:24/1
|
提交时间:2025/04/14
copper oxide
HERED mode
Raman
Resonant Auger
X-ray absorption spectroscopy
Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT
期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:
Yitai zhu
;
Haitao Du
;
Yu Zhang
;
Haolan Qu
;
Haodong Jiang
Microsoft Word(2182Kb)
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浏览/下载:66/1
|
提交时间:2025/03/07
Aluminum gallium nitride
Deep level transient spectroscopy
Gates (transistor)
High electron mobility transistors
Indium phosphide
Junction gate field effect transistors
MOS devices
MOSFET devices
Semiconducting aluminum compounds
Semiconducting gallium compounds
Semiconducting indium phosphide
Surface discharges
Threshold voltage
AlGaN
Dynamic performance
Dynamics characteristic
Enhancement mode
GaN metal oxide semiconductor high electron mobility transistor
Interface traps
Metal-oxide-semiconductor high-electron mobility transistors
Neutral beam etching
Normally off
Recessed gate
Phase Modulation of 2D Semiconducting GaTe from Hexagonal to Monoclinic through Layer Thickness Control and Strain Engineering
期刊论文
NANO LETTERS, 2025
作者:
Quan, Wenzhi
;
Wu, Xinyan
;
Cheng, Yujin
;
Lu, Yue
;
Wu, Qilong
Adobe PDF(8322Kb)
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浏览/下载:7/2
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提交时间:2025/04/28
phase engineering
GaTe
scanning tunnelingmicroscopy/spectroscopy
molecular beam epitaxy
III-VI semiconductors
A Phototautomeric 3D Covalent Organic Framework for Ratiometric Fluorescence Humidity Sensing
期刊论文
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2025, 卷号: 147, 期号: 11
作者:
Yao, Xuan
;
Zhang, Youchang
;
Qiu, Yu
;
Jiang, Wentao
;
Chen, Hao
Adobe PDF(13903Kb)
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浏览/下载:79/9
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提交时间:2025/03/18
Atomic emission spectroscopy
Photochemical reactions
Bio-imaging
Covalent organic frameworks
Fluorescence sensing
Humidity sensing
Light emitters
Photo-induced
Photochemical process
Ratiometric fluorescence
Sensing material
White light
Doppler spectroscopic measurement of the axial and transverse expansion of a hypersonic plasma jet in PJMIF
期刊论文
PHYSICS OF PLASMAS, 2025, 卷号: 32, 期号: 3
作者:
Hao, Chunjing
;
Thio, Y. C. Francis
;
Li, Mingrui
;
Li, Guangyu
;
Sun, Yi
Adobe PDF(4964Kb)
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浏览/下载:51/4
|
提交时间:2025/03/25
Acoustic wave velocity
Gaussian distribution
Hypersonic aerodynamics
Magnetoplasma
Plasma flow
Plasma guns
Velocity distribution
Doppler
Doppler spectroscopy
High mach number
Hypersonic plasma
Lows-temperatures
Magneto-inertial fusion
Measurements of
Paper documents
Spectroscopic measurements
Symmetry properties
Observation of multiple surface states in naturally cleavable chiral crystal PdSbSe
期刊论文
PHYSICAL REVIEW MATERIALS, 2025, 卷号: 9, 期号: 3
作者:
Jiang, Zhicheng
;
Liu, Zhengtai
;
Hua, Chenqiang
;
Liu, Xiangqi
;
Yang, Yichen
Adobe PDF(2632Kb)
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收藏
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浏览/下载:2/1
|
提交时间:2025/04/25
Atomic emission spectroscopy
Chirality
Crystal symmetry
Fermi surface
Photoacoustic spectroscopy
Single crystal surfaces
Chiral crystals
Density-functional theory calculations
Flatter surfaces
High-resolution angle-resolved photoemission spectroscopies
Multiple surfaces
Nontrivial topology
Physical phenomena
Structure property
Symmetry breakings
Topological properties
Probing thickness-dependent tip-induced band bending in MoS
2
期刊论文
APPLIED PHYSICS LETTERS, 2025, 卷号: 126, 期号: 11
作者:
Liao, Jian
;
Taniguchi, Takashi
;
Watanabe, Kenji
;
Xue, Jiamin
Adobe PDF(2334Kb)
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收藏
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浏览/下载:20/2
|
提交时间:2025/03/31
Carrier concentration
III-V semiconductors
Wide band gap semiconductors
A: semiconductors
Band bendings
Band-bending effects
Conduction band edge
Electronic band structure
MoS 2
Scanning tunnelling spectroscopy
Spectroscopy measurements
Tip-induced
Valence band edges
Charge Dynamics of an Unconventional Three-Dimensional Charge Density Wave in Kagome FeGe
期刊论文
PHYSICAL REVIEW LETTERS, 2025, 卷号: 134, 期号: 8
作者:
Yi, Shaohui
;
Liao, Zhiyu
;
Wang, Qi
;
Ma, Haiyang
;
Liu, Jianpeng
Adobe PDF(4973Kb)
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浏览/下载:200/32
|
提交时间:2025/03/14
Antiferromagnetism - Cesium alloys - Charge density waves - Germanium compounds
Antiferromagnets - Band structure calculation - Charge dynamics - Charge-density-waves - Density wave transition - High-to-low - Infrared bands - Optical- - Polarized infrared spectroscopy - Spectral weight
Infrared spectroscopy study of the kagome material CsTi3Bi5
期刊论文
PHYSICAL REVIEW B, 2025, 卷号: 111, 期号: 7
作者:
Cao, Liye
;
Liu, Xiangqi
;
Cheng, Jiayi
;
Gao, Bixia
;
Zhang, Xiaoting
Adobe PDF(14523Kb)
|
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|
浏览/下载:225/36
|
提交时间:2025/03/14
Antimony compounds - Bismuth alloys - Cadmium compounds - Cesium compounds - Crystalline materials - Spectroscopic analysis - Titanium compounds - Vanadium compounds
Charge-density-waves - Infrared: spectroscopy - Isostructural - Kagome lattice - Kagome materials - Optical spectroscopic - Spectroscopic measurements - Titanium atoms - Two-dimensional - Van Hove singularities
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