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	Generation of continuous extreme ultraviolet laser 期刊论文 KEXUE TONGBAO/CHINESE SCIENCE BULLETIN, 2024, 卷号: 69, 期号: 28-29, 页码: 4209-4217 作者: Hong, Daobiao; Liu, Zhonghao Adobe PDF(4639Kb) \| 收藏 \| 浏览/下载：420/76 \| 提交时间：2024/10/25 Atom lasers Electron ring accelerators Extreme ultraviolet lithography Four wave mixing Helium neon lasers Injection lasers Ionization of gases Ionization of liquids Laser beams Laser excitation Laser optics Laser produced plasmas Molecular vibrations Optical pumping Photodissociation Stimulated Raman scattering Superfluid helium Synchrotron radiation Ultraviolet lasers Anti-stokes Raman scattering Continuous lasers Discharge power Extreme ultraviolet lasers Extreme ultraviolet lights Helium pressure Near Infrared Near-infrared Near-infrared lasers Single photon process
	Substantial Energy Band Modulation of Semiconducting Hexagonal GaTe Quantum Wells by Layer Thickness and Mirror Twin Boundaries 期刊论文 ACS NANO, 2024, 卷号: 18, 期号: 31, 页码: 20591-20599 作者: Quan, Wenzhi; Lu, Yue; Wu, Qilong; Cheng, Yujin; Hu, Jingyi Adobe PDF(8504Kb) \| 收藏 \| 浏览/下载：241/3 \| 提交时间：2024/08/09 Defects Density functional theory Electronic properties Energy gap Mirrors Molecular beams Quantum theory Scanning tunneling microscopy Semiconductor doping Semiconductor quantum wells Van der Waals forces Hexagonal gate Mirror twin boundary Molecular-beam epitaxy Quantum-well state Quantum-wells Scanning tunneling microscopy/spectroscopy Substantial energy Twin boundaries Ultra-thin Van der Waal
	Correlation between MBE deoxidation conditions and InGaAs/InP APD performance 期刊论文 HONGWAI YU HAOMIBO XUEBAO/JOURNAL OF INFRARED AND MILLIMETER WAVES, 2024, 卷号: 43, 期号: 1, 页码: 63-69 作者: Guo, Zi-Lu; Wang, Wen-Juan; Qu, Hui-Dan Adobe PDF(6878Kb) \| 收藏 \| 浏览/下载：266/3 \| 提交时间：2024/02/23 Carrier concentration Heterojunctions III-V semiconductors Indium phosphide Infrared devices Molecular beams Optoelectronic devices Point defects Semiconducting indium Semiconducting indium gallium arsenide Semiconducting indium phosphide Semiconductor alloys Semiconductor quantum dots Substrates Condition Deoxidation Hetero-interfaces Heterointerface diffusion High sensitivity InGaAs/InP avalanche photodiodes InP substrates Molecular-beam epitaxy P/as exchange Performance
	Spontaneous Line Defect-Induced Co4Te7 Superlattices on SrTiO3(001) Featuring Flat Bands 期刊论文 ADVANCED FUNCTIONAL MATERIALS, 2024, 卷号: 34, 期号: 29 作者: Adobe PDF(8780Kb) \| 收藏 \| 浏览/下载：270/2 \| 提交时间：2024/04/12 Defects Density functional theory Electronic properties Molecular beams Monolayers Scanning tunneling microscopy Strontium titanates Substrates Tellurium Tellurium compounds Titanium compounds 1-D structures 1d structure/pattern Defect arrays Defects induced Flat band Line defects Luttinger liquids Moire pattern Molecular-beam epitaxy Scanning tunneling microscopy/spectroscopy
	Correlation of preparation conditions of SrRuO3 ultrathin films with topological Hall effect 期刊论文 WULI XUEBAO/ACTA PHYSICA SINICA, 2023, 卷号: 72, 期号: 9 作者: Zhang, Jing-Xian; Bao, Ming-Rui; Ye, Fei; Liu, Jia; Cheng, Long Adobe PDF(2527Kb) \| 收藏 \| 浏览/下载：292/1 \| 提交时间：2023/06/02 Crystallinity Fermi liquids Fermions Molecular beam epitaxy Molecular beams Quantum Hall effect Ruthenium Ruthenium compounds Spin Hall effect Temperature Topology Transition metal oxides Transport properties Growth control Highest temperature Laser energy density Laser molecular beam epitaxy Lows-temperatures Preparation conditions SrRuO 3 Target surface Thin-films Topological hall effect
	Linear-mode HgCdTe avalanche photodiode detectors for photon-counting applications (invited) 期刊论文 HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2023, 卷号: 52, 期号: 3 作者: Guo, Huijun; Chen, Lu; Yang, Liao; Shen, Chuan; Xie, Hao Adobe PDF(3193Kb) \| 收藏 \| 浏览/下载：373/0 \| 提交时间：2023/07/14 Avalanche photodiodes Cadmium alloys Cadmium telluride Charge coupled devices II-VI semiconductors Incident light Mercury amalgams Mercury compounds Molecular beam epitaxy Particle beams Photons Semiconductor alloys APD detectors Device structure Excess noise Excess noise factor Free-space communication Linear modes Linear-mode avalanche Medium wave Photon counting Photon detection efficiency
	Interband transitions of InAs/AlAs Short-Period superlattices grown by molecular beam epitaxy 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2023, 卷号: 605 作者: Yao, Lu; Wang, Wenyang; Yao, Jinshan; Lu, Kechao; Lu, Hong Adobe PDF(1253Kb) \| 收藏 \| 浏览/下载：308/2 \| 提交时间：2023/03/10 luminum Aluminum compounds III-V semiconductors Indium Indium arsenide Molecular beams Optical properties Semiconductor quantum wells Spectroscopic ellipsometry A1. A3. B1. B2. Inter-band transition Molecular-beam epitaxy Semiconducting ternary materials Short period superlattice
	In-situ ellipsometric study on composition-dependent short-wave HgCdTe in the process of molecular beam epitaxy growth 会议论文 PROCEEDINGS OF SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, Nantong, China, September 17, 2022 - September 19, 2022 作者: Yang, Liao; Shen, Chuan; Chen, Lu; He, Li Adobe PDF(535Kb) \| 收藏 \| 浏览/下载：279/0 \| 提交时间：2023/06/02 Blue shift Buffer layers Cadmium alloys Heterojunctions II-VI semiconductors Molecular beams Semiconductor alloys Semiconductor doping Spectroscopic ellipsometry Surface roughness Focal plane array detector Hg1-xCdxTe In-situ spectroscopic ellipsometry Infrared photodetector Molecular-beam epitaxy Performance Real time monitoring Real- time Run-to-run Short waves

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