Correlation of preparation conditions of SrRuO3 ultrathin films with topological Hall effect

doi:10.7498/aps.72.20221854

	Correlation of preparation conditions of SrRuO3 ultrathin films with topological Hall effect
其他题名	SrRuO3超薄膜制备条件和拓扑霍尔效应的关联
	Zhang, Jing-Xian1,2 ; Bao, Ming-Rui2 ; Ye, Fei2 ; Liu, Jia2 ; Cheng, Long2 ; Zhai, Xiao-Fang2
	2023-05-05
发表期刊	WULI XUEBAO/ACTA PHYSICA SINICA
ISSN	1000-3290
卷号	72 期号:9
发表状态	已发表
DOI	10.7498/aps.72.20221854
摘要	As one of the magnetic transition metal oxides, SrRuO3 (SRO) has received much attention in recent years, which is mainly due to its unique itinerate ferromagnetism and the unusual electrical transport properties–behaving as Fermi liquid at low temperature and bad metal at high temperature. In the growth of SRO thin films, there are many factors that can affect the quality of thin films. In this work, we study various factors affecting the growth and quality of SRO thin films by using laser molecular beam epitaxy (laser MBE), including laser energy density, substrate temperature and target surface conditions, and explore their influences on the topological Hall effect (THE) in SRO. For thin films grown at high laser energy density and high temperature, we found that there are large trenches at the edge of steps, which deteriorate the transport properties of the thin films. When using low laser energy density, extra SrO may exist in the films, which also suppresses the conductivity. Films grown at low temperature tend to have poor crystallinity while films grown at high temperature exhibit island structures. The ablation degree of the target surface increases the decomposition of SRO to SrO, Ru and volatile RuO4, resulting in Ru defects in the grown thin film. The SRO thin film grown under the optimal conditions (1.75 J·cm–2, 670 , fresh target surface) exhibits the optimal conductivity and the strongest THE. For non-optimal growth conditions that favors thickness inhomogeneity or Ru defects in the film, THE becomes weaker or even disappears. Therefore, we believe that the THE is due to the Dzyaloshinskii-Moriya interaction (DMI) resulting from the interfacial inversion asymmetry and the associated chiral spin structures. © 2023 Institute of Physics, Chinese Academy of Sciences. All rights reserved.
关键词	Crystallinity Fermi liquids Fermions Molecular beam epitaxy Molecular beams Quantum Hall effect Ruthenium Ruthenium compounds Spin Hall effect Temperature Topology Transition metal oxides Transport properties Growth control Highest temperature Laser energy density Laser molecular beam epitaxy Lows-temperatures Preparation conditions SrRuO 3 Target surface Thin-films Topological hall effect
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收录类别	EI ; SCI ; 北大核心
语种	中文
资助项目	National Science Foundation of China["52072244","12104305"] ; Science and Technology Commission of Shanghai Municipality, China[21JC1405000]
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:001003527200017
出版者	Institute of Physics, Chinese Academy of Sciences
EI入藏号	20232014109319
EI主题词	Thin films
EI分类号	547.1 Precious Metals ; 641.1 Thermodynamics ; 701.2 Magnetism: Basic Concepts and Phenomena ; 714 Electronic Components and Tubes ; 921.4 Combinatorial Mathematics, Includes Graph Theory, Set Theory ; 931 Classical Physics ; Quantum Theory ; Relativity ; 931.2 Physical Properties of Gases, Liquids and Solids ; 931.3 Atomic and Molecular Physics ; 933.1 Crystalline Solids ; 933.1.2 Crystal Growth
原始文献类型	Journal article (JA)
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/305079
专题	物质科学与技术学院物质科学与技术学院_博士生信息科学与技术学院_硕士生物质科学与技术学院_PI研究组_翟晓芳组
通讯作者	Cheng, Long; Zhai, Xiao-Fang
作者单位	1.Univ Sci & Technol China, Dept Mat Sci & Engn, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zhang, Jing-Xian,Bao, Ming-Rui,Ye, Fei,et al. Correlation of preparation conditions of SrRuO3 ultrathin films with topological Hall effect[J]. WULI XUEBAO/ACTA PHYSICA SINICA,2023,72(9).
APA	Zhang, Jing-Xian,Bao, Ming-Rui,Ye, Fei,Liu, Jia,Cheng, Long,&Zhai, Xiao-Fang.(2023).Correlation of preparation conditions of SrRuO3 ultrathin films with topological Hall effect.WULI XUEBAO/ACTA PHYSICA SINICA,72(9).
MLA	Zhang, Jing-Xian,et al."Correlation of preparation conditions of SrRuO3 ultrathin films with topological Hall effect".WULI XUEBAO/ACTA PHYSICA SINICA 72.9(2023).