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Highly Efficient Spin-Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2025
作者:
Zhang, Kewen
;
Wu, Yuhang
;
Song, Jingyan
;
Guo, Yitian
;
Cai, Xiaolun
Adobe PDF(3274Kb)
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收藏
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浏览/下载:49/0
|
提交时间:2025/02/28
Aluminum arsenide
Electric insulators
Layered semiconductors
Magnetic shape memory
Spin Hall effect
Spin orbit coupling
Topological insulators
'current
Anomalous hall effects
Berry curvature
Bi-layer
Chromium tellurides
Energy efficient
Magnetization switching
Spin orbits
Spin-orbit torque
Topological insulators
Field-Free Rashba-Type Crystal Torque MRAM with High Efficiency and Thermal Stability
会议论文
2024 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), San Francisco, CA, USA, 7-11 Dec. 2024
作者:
Puyang Huang
;
Shan Yao
;
Aitian Chen
;
Zhenghang Zhi
;
Chenyi Fu
Adobe PDF(1990Kb)
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浏览/下载:79/4
|
提交时间:2025/03/03
Crystal symmetry
Diluted magnetic semiconductors
Dynamic random access storage
Electromagnetic induction
Magnetic core storage
Magnetic recording
Magnetic tape storage
MRAM devices
Semiconducting indium phosphide
Static random access storage
System-on-chip
A-stable
CdTe
High thermal
Higher efficiency
Magnetic random access memory
Metal systems
Rashba spin-orbit coupling
Spin orbits
Switching scheme
Write currents
Anomalous switching pattern in the ferrimagnetic memory cell
期刊论文
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2024, 卷号: 611
作者:
Xu, Zhuo
;
Yuan, Zhengping
;
Zhang, Xue
;
Xu, Zhengde
;
Qiao, Yixiao
Adobe PDF(2538Kb)
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收藏
|
浏览/下载:223/7
|
提交时间:2024/11/22
Magnetic logic devices
Magnetic recording
Magnetization reversal
Magnetoresistance
MRAM devices
Compensation points
Ferrimagnetic memory cell
Ferrimagnetics
Ferrimagnets
Magnetic tunnel junction
Magnetization switching
Memory cell
Spin transfer torque
Switching patterns
Switching window
Revisiting the analytical solution of spin-orbit torque switched
期刊论文
PHYSICAL REVIEW B, 2024, 卷号: 110, 期号: 18
作者:
Zhang, Xue
;
Xu, Zhengde
;
Zhu, Zhifeng
Adobe PDF(1400Kb)
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浏览/下载:167/2
|
提交时间:2024/12/17
Magnetic disk storage
Magnetization reversal
Nanomagnetics
Random access storage
Spin dynamics
Ferromagnets
Magnetic memory
Magnetization dynamics
Nano scale
Nanometer size
Scalings
Smooth transitions
Spin orbits
Switching currents
Theoretical modeling
Orthogonal spin-orbit torque-induced deterministic switching in NiO
期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 18
作者:
Qiao, Yixiao
;
Xu, Zhengde
;
Xu, Zhuo
;
Yang, Yumeng
;
Zhu, Zhifeng
Adobe PDF(884Kb)
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收藏
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浏览/下载:289/56
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提交时间:2024/11/19
Antiferromagnetism
Magnetic logic devices
Magnetic moments
Magnetic recording
Magnetoresistance
MRAM devices
Antiferromagnetics
Antiferromagnets
Deterministics
Electrical switching
Hall magnetoresistance
Magnetic random access memory
Orthogonal current
Spin orbits
Sub-lattices
Ultra-fast
Spin-transfer-torque induced spatially nonuniform switching in ferrimagnets
期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 124, 期号: 1
作者:
Zhang, Xue
;
Xu, Zhengde
;
Ren, Jie
;
Qiao, Yixiao
;
Fan, Weijia
Adobe PDF(3233Kb)
|
收藏
|
浏览/下载:347/50
|
提交时间:2024/04/26
Binary alloys
Cobalt alloys
Ferrimagnetism
Iron alloys
Magnetic storage
Magnetization
Random access storage
Tunnel junctions
Atomistic modelling
Ferrimagnets
Magnetic dynamics
Magnetic random access memory
Magnetic tunnel junction
Small samples
Spin transfer torque
Sub-lattices
Ultra-fast
Writing speed
A Read Margin Enhancement Circuit With Dynamic Bias Optimization for MRAM
期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: EXPRESS BRIEFS, 2024, 卷号: PP, 期号: 99, 页码: 3905-3909
作者:
Chen, Renhe
;
Lee, Albert
;
Wang, Zirui
Adobe PDF(2470Kb)
|
收藏
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浏览/下载:463/7
|
提交时间:2023/11/22
Magnetic random access memory
read margin enhancement
tunneling magnetoresistance ratio
readout mechanism
bias voltage optimization
Field-free spin-orbit torque switching of an antiferromagnet with perpendicular Néel vector
期刊论文
JOURNAL OF APPLIED PHYSICS, 2023, 卷号: 133, 期号: 15, 页码: 153904
作者:
Xu, Zhengde
;
Ren, Jie
;
Yuan, Zhengping
;
Xin, Yue
;
Zhang, Xue
Adobe PDF(2282Kb)
|
收藏
|
浏览/下载:302/1
|
提交时间:2023/05/12
Antiferromagnetic materials
Magnetic moments
Magnetic storage
Antiferromagnets
Ferromagnetics
Magnetic memory
Metal structures
Operation speed
Orthogonal current
Performance
Spin orbits
Trilayers
Uniform fields
Spin-orbit torque
perpendicular antiferromagnet
ultrafast switching
two orthogonal currents
Wafer-Scale Epitaxial Growth of the Thickness-Controllable Van Der Waals Ferromagnet CrTe2 for Reliable Magnetic Memory Applications
期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2023, 卷号: 33, 期号: 50
作者:
Liu, Xinqi
;
Huang, Puyang
;
Xia, Yunyouyou
;
Gao, Lei
;
Liao, Liyang
Adobe PDF(1145Kb)
|
收藏
|
浏览/下载:902/279
|
提交时间:2023/09/22
Alumina
Aluminum oxide
Energy efficiency
Epitaxial growth
Ferromagnetic materials
Ferromagnetism
Magnetization
Sapphire
Structural optimization
Surface morphology
Van der Waals forces
2d ferromagnet
Ferromagnets
Interface engineering
Magnetic memory
Spin orbits
Spin-orbit torque switch
Van der Waal
Van der waal heterostructure
Wafer scale
Wafer-scale epitaxial growth
Strain-mediated magnetoelectric storage, transmission, and processing: Putting the squeeze on data
期刊论文
MRS BULLETIN, 2018, 卷号: 43, 期号: 11, 页码: 848-853
作者:
Domann, John
;
Wu, Tao
;
Chung, Tien-Kan
;
Carman, Greg
Adobe PDF(1148Kb)
|
收藏
|
浏览/下载:734/10
|
提交时间:2018/12/01
magnetic
ferroelectric
piezoelectric
nanoscale
memory
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