Highly Efficient Spin-Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature

doi:10.1002/aelm.202400820

	Highly Efficient Spin-Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature
	Zhang, Kewen 1; Wu, Yuhang 1; Song, Jingyan 1; Guo, Yitian 1; Cai, Xiaolun 2; Cheng, Long3 ; Zheng, Dongxing 4; Chen, Aitian 4,5; Li, Peng 1,4; Zhang, Xixiang 4
	2025
发表期刊	ADVANCED ELECTRONIC MATERIALS
ISSN	2199-160X
EISSN	2199-160X
发表状态	已发表
DOI	10.1002/aelm.202400820
摘要	Energy-efficient magnetization switching by current-induced spin-orbit torques drives the application of spintronics in memory and neural networks. Given the intrinsic strong spin-orbit coupling, topological insulators (TI) with spin-momentum locking are expected to be promising candidates for generating a significant spin-orbit torque compared to the heavy metal system. To achieve high charge-to-spin conversion efficiency, it is imperative to incorporate a ferromagnetic layer with low conductivity. In this study, a high spin-torque efficiency (βL = 12.9 × 10−6mT A−1cm2) and spin Hall conductivity ((Formula presented.)) are reported as being observed at 80 K in a Cr2Te3/(Bi0.5Sb0.5)2Te3 bilayer. The magnetization switching induced by spin-orbit torque in a Cr2Te3/(Bi0.5Sb0.5)2Te3 bilayer is observed. It is demonstrated that the hump-like feature in the anomalous Hall effect (AHE) resistance curve can be attributed to the presence of two magnetic phases in compressively strained chromium telluride grown on a c-Al2O3 substrate using molecular beam epitaxy (MBE). The work holds the promise of propelling efficiency advancements in spintronic applications that leverage the unique properties of topological insulators. © 2025 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH.
关键词	Aluminum arsenide Electric insulators Layered semiconductors Magnetic shape memory Spin Hall effect Spin orbit coupling Topological insulators 'current Anomalous hall effects Berry curvature Bi-layer Chromium tellurides Energy efficient Magnetization switching Spin orbits Spin-orbit torque Topological insulators
URL	查看原文
收录类别	SCI ; EI
语种	英语
资助项目	National Key Research and Development Program of China[
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:001419056300001
出版者	John Wiley and Sons Inc
EI入藏号	20250717860858
EI主题词	Molecular beam epitaxy
EI分类号	1004 Thermoelectric Energy and Power Generation ; 1301.1.3 Atomic and Molecular Physics ; 1301.1.4 Quantum Theory ; Quantum Mechanics ; 1301.4 Solid State Physics ; 1301.4.1.2 Crystal Growth ; 214 Materials Science ; 701.2 Magnetism: Basic Concepts and Phenomena ; 708.1 Dielectric Materials ; 712.1.2 Compound Semiconducting Materials ; 804.2 Inorganic Compounds
原始文献类型	Article in Press
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/490320
专题	物质科学与技术学院物质科学与技术学院_PI研究组_翟晓芳组
通讯作者	Cai, Xiaolun; Zheng, Dongxing; Li, Peng
作者单位	1.State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu; 610054, China; 2.College of Big Data and Statistics, Sichuan Tourism University, Chengdu; 610110, China; 3.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China; 4.Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal; 23955-6900, Saudi Arabia; 5.School of Physics, University of Electronic Science and Technology of China, Chengdu; 611731, China
推荐引用方式 GB/T 7714	Zhang, Kewen,Wu, Yuhang,Song, Jingyan,et al. Highly Efficient Spin-Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature[J]. ADVANCED ELECTRONIC MATERIALS,2025.
APA	Zhang, Kewen.,Wu, Yuhang.,Song, Jingyan.,Guo, Yitian.,Cai, Xiaolun.,...&Zhang, Xixiang.(2025).Highly Efficient Spin-Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature.ADVANCED ELECTRONIC MATERIALS.
MLA	Zhang, Kewen,et al."Highly Efficient Spin-Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature".ADVANCED ELECTRONIC MATERIALS (2025).