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Near-infrared light-emitting diode based on graphene/layered γ-InSe Schottky junction
期刊论文
OPTICS LETTERS, 2025, 卷号: 50, 期号: 11, 页码: 3541-3544
作者:
Ge, Anping
;
Sun, Liaoxin
;
Jing, Wenji
;
Zhou, Dongjie
;
Ma, Lei
Adobe PDF(4114Kb)
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收藏
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浏览/下载:9/0
|
提交时间:2025/06/17
Fluorescence
Image intensifiers (solid state)
Image sensors
Luminescence of gases
Organic light emitting diodes (OLED)
Photoconducting devices
Photodetectors
Photoelectric cells
Photonic integration technology
Phototubes
Triboluminescence
Broad application
Graphenes
Infrared light emitting diodes
Infrared light-emitting diodes
Layered material
Near infrared light
Near infrared light sources
On chips
Schottky junctions
Van der Waal
Nonlinear memristive computational spectrometer
期刊论文
LIGHT-SCIENCE & APPLICATIONS, 2025, 卷号: 14, 期号: 1
作者:
Li, Xin
;
Wang, Jie
;
Yu, Feilong
;
Chen, Jin
;
Chen, Xiaoshuang
Adobe PDF(2801Kb)
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浏览/下载:278/1
|
提交时间:2024/12/01
Bosons - Palladium compounds - Photons
'current - High spectral resolution - Homo-junctions - Ion migration - Memristor - Miniaturisation - Nonlinear photonics - Palladium ion - Photoresponses - Tunabilities
Inductance and penetration depth measurements of polycrystalline NbN films for all-NbN single flux quantum circuits
期刊论文
SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2025, 卷号: 38, 期号: 1
作者:
Zhong, Yulong
;
Zhang, Lu
;
Xie, Junjie
;
Zheng, Zengxu
;
Lu, Mingjun
Adobe PDF(1166Kb)
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浏览/下载:199/2
|
提交时间:2024/12/17
inductance
penetration depth
Josephson junctions
polycrystalline niobium nitride (NbN) films
superconductor integrated circuit
Enhancement of Voltage-Controlled Magnetic Anisotropy in Orthogonally-Magnetized CoFeB/MgO/CoFeB
会议论文
2024 IEEE INTERNATIONAL MAGNETIC CONFERENCE - SHORT PAPERS (INTERMAG SHORT PAPERS), Rio de Janeiro, Brazil, 5-10 May 2024
作者:
Puyang Huang
;
Aitian Chen
;
Xinyu Cai
;
Di Wu
;
Xi-Xiang Zhang
Adobe PDF(365Kb)
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浏览/下载:376/2
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提交时间:2024/07/08
Capacitance
Cobalt compounds
Iron compounds
Magnesia
Magnetic recording
MRAM devices
Anisotropy coefficients
Anisotropy effect
Circuit modeling
High-speed low-power
Interfacial capacitance
Magnetic tunneling junctions
Negative interfacial capacitance
Optimisations
Voltage-controled magnetic anisotropy effect
Voltage-controlled
Interfacial Resonance States-Induced Negative Tunneling Magneto-Resistance in Orthogonally Magnetized CoFeB/MgO/CoFeB
期刊论文
IEEE TRANSACTIONS ON MAGNETICS, 2024, 卷号: 60, 期号: 3
作者:
Puyang Huang
;
Aitian Chen
;
Jianting Dong
;
Di Wu
;
Xinqi Liu
Adobe PDF(1265Kb)
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浏览/下载:1726/6
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提交时间:2023/09/24
First-principle calculation
interfacial resonant state
magnetic tunnel junction (MTJ)
negative tunneling magneto-resistance (TMR)
Cobalt compounds
Iron compounds
Magnesia
Magnetic anisotropy
MRAM devices
Tunnel junctions
Tunnelling magnetoresistance
First principle calculations
Interfacial resonant state
Magnetic tunneling
Magnetic tunneling junctions
Magnetic-field
Negative tunneling magneto-resistance
Perpendicular magnetic anisotropy
Resistance
Resonant state
Tunneling magnetoresistance
Fabrication and characterization of sub-micron high current density NbN Josephson junctions for large-scale digital circuits
期刊论文
PHYSICA C: SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2024, 卷号: 616
作者:
Shao, Yingyi
;
Wang, Huiwu
;
Peng, Wei
;
Ren, Jie
;
Wang, Zhen
Adobe PDF(1958Kb)
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浏览/下载:325/0
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提交时间:2024/02/02
Chemical mechanical polishing
Current density
Fabrication
Magnesia
Niobium compounds
Quantum optics
Single crystals
Substrates
Superconducting films
Timing circuits
Tunnel junctions
Fabrication and characterizations
Fabrication process
High current densities
Josephson-junction
Large-scales
MgO substrate
NbN/AlN/NbN josephson junction
Process-based
Sub-micron junction
Submicron
Spin-transfer-torque induced spatially nonuniform switching in ferrimagnets
期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 124, 期号: 1
作者:
Zhang, Xue
;
Xu, Zhengde
;
Ren, Jie
;
Qiao, Yixiao
;
Fan, Weijia
Adobe PDF(3233Kb)
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浏览/下载:399/72
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提交时间:2024/04/26
Binary alloys
Cobalt alloys
Ferrimagnetism
Iron alloys
Magnetic storage
Magnetization
Random access storage
Tunnel junctions
Atomistic modelling
Ferrimagnets
Magnetic dynamics
Magnetic random access memory
Magnetic tunnel junction
Small samples
Spin transfer torque
Sub-lattices
Ultra-fast
Writing speed
Selective capture of Tl2O from flue gas with formation of p–n junction on V2O5–WO3/TiO2 catalyst under working conditions
期刊论文
GREEN ENERGY & ENVIRONMENT, 2023, 卷号: 8, 期号: 1, 页码: 4-9
作者:
Chen, Jianjun
;
Yin, Rongqiang
;
Chen, Gongda
;
Lang, Junyu
;
Chen, Xiaoping
Adobe PDF(2435Kb)
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浏览/下载:504/0
|
提交时间:2022/02/18
Electrocatalysis
Flue gases
Flues
Semiconductor junctions
Titanium dioxide
Tungsten compounds
Vanadium pentoxide
Best choice
Capture
Condition
Dismutation
Heterocatalysis
Orbitals
P-n junction
]+ catalyst
Realization of Zero-Field Skyrmions in a Magnetic Tunnel Junction
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2023, 卷号: 9, 期号: 4
作者:
He, Bin
;
Hu, Yue
;
Zhao, Chenbo
;
Wei, Jinwu
;
Zhang, Junwei
Adobe PDF(2378Kb)
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浏览/下载:484/0
|
提交时间:2023/03/10
Magnetic devices
Room temperature
Tunnel junctions
Enhanced exchange bias
Exchange bias
Magnetic skyrmion
Magnetic tunnel junction
Noncollinear
Skyrmions
Spintronics device
Zero fields
Zero-field skyrmion
Terahertz Nonlinear Hall Rectifiers Based on Spin-Polarized Topological Electronic States in 1T-CoTe2
期刊论文
ADVANCED MATERIALS, 2023, 卷号: 35, 期号: 10
作者:
Hu, Zhen
;
Zhang, Libo
;
Chakraborty, Atasi
Adobe PDF(7805Kb)
|
收藏
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浏览/下载:430/0
|
提交时间:2023/03/10
rystal symmetry
Electric fields
Electric rectifiers
Rectifying circuits
Semiconductor junctions
Spin Hall effect
Tellurium compounds
1t-cote 2
Inversion symmetry
Nonlinear hall effect
Second orders
Spin-polarized
Symmetry breakings
Tera Hertz
Terahertz rectification
Type II
Type-II dirac semimetal
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