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Regulation of charge density wave and superconductivity in kagome superconductor CsV3Sb5 by intercalation
期刊论文
PROGRESS IN NATURAL SCIENCE: MATERIALS INTERNATIONAL, 2025, 卷号: 35, 期号: 1, 页码: 122-128
作者:
Xiao, Han
;
Zhang, Yingxu
;
Yu, Lixuan
;
Mi, Mengjuan
;
Liu, Xiangqi
Adobe PDF(1575Kb)
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浏览/下载:40/2
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提交时间:2025/03/14
Electrolytes - Electron transport properties - Hole concentration - Intercalation compounds - Layered semiconductors - Nanocrystallization - Negative ions - Organic superconducting materials - Positive ions - Selenium compounds - Semiconductor doping - Superconducting transition temperature - Van der Waals forces - Vanadium compounds
Carrier doping - Charge-density-waves - Gel electrolyte - Ion intercalation - Ionic gels - Kagome superconductor - Li + - Li+ ion intercalation - Protective layers - Van der Waal
Ground-state phase diagram and superconductivity of the doped Hubbard model on six-leg square cylinders
期刊论文
PHYSICAL REVIEW B, 2024, 卷号: 109, 期号: 8
作者:
Jiang, Yi-Fan
;
Devereaux, Thomas P.
;
Jiang, Hong-Chen
Adobe PDF(1690Kb)
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浏览/下载:401/64
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提交时间:2024/03/08
Charge density
Cylinders (shapes)
Ground state
Hole concentration
Hubbard model
Statistical mechanics
Charge-density-waves
Density matrix renormalization group
Doped holes
Electrons hopping
Ground state phase diagram
Ground state properties
Nearest-neighbour
Number of state
Square cylinders
State of the art
Heavy Boron-Doped Silicon Tunneling Inter-layer Enables Efficient Silicon Heterojunction Solar Cells
期刊论文
ACS APPLIED MATERIALS AND INTERFACES, 2024, 卷号: 16, 期号: 35, 页码: 46889-46896
作者:
Zhou, Yinuo
;
Zhang, Honghua
;
Li, Zhenfei
;
Huang, Shenglei
;
Du, Junlin
Adobe PDF(3309Kb)
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浏览/下载:218/2
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提交时间:2024/09/06
Amorphous films
Hard facing
Hole concentration
Hole mobility
Hydrogenation
Nanocrystalline materials
Silicon wafers
Surface discharges
Valence bands
Bandtail state
Carrier collection
Heterojunction solar cells
Hole carrier collection
Hole carriers
Hydrogenated nanocrystalline silicon
Multi-level valence band tail state
Multilevels
Silicon heterojunction solar cell
Silicon heterojunctions
Valence-band offset
Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy
期刊论文
JOURNAL OF SEMICONDUCTORS, 2024, 卷号: 45, 期号: 3
作者:
Jin Sui
;
Jiaxiang Chen
;
Haolan Qu
;
Yu Zhang
;
Xing Lu
Adobe PDF(4177Kb)
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浏览/下载:265/0
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提交时间:2024/04/06
GaN
deep level transient spectroscopy
minority carrier trap
time constant
trap concentration
Activation energy
Deep level transient spectroscopy
Electric fields
Hole concentration
III-V semiconductors
Laser beams
Schottky barrier diodes
Semiconductor diodes
Wide band gap semiconductors
Activation energy E
Carrier traps
Deep hole trap
Deep levels transient spectroscopy
Emission process
Minority carrier
Minority carrier trap
Optical-
Time-constants
Trap concentration
Evolution of magnetotransport properties of Weyl semiconductor Te crystals with different Fermi energy
期刊论文
PHYSICAL REVIEW B, 2023, 卷号: 108, 期号: 19
作者:
Yin, Cheng-Hao
;
Fang, Hong-Wei
;
Jiang, Hong-Tao
;
Cao, Lin
;
Han, Shuang
Adobe PDF(3284Kb)
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浏览/下载:228/0
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提交时间:2024/01/19
Crystal impurities
Dispersions
Fermi level
Hole concentration
Photoelectron spectroscopy
Semiconductor doping
Tellurium compounds
Chiral anomaly
Cooling rates
Crystal temperatures
Electronic dispersions
Linear dispersion
Low hole concentration
Magneto transport properties
Quasi-linear
Self-flux methods
Tellurium crystals
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