Heavy Boron-Doped Silicon Tunneling Inter-layer Enables Efficient Silicon Heterojunction Solar Cells

doi:10.1021/acsami.4c07897

	Heavy Boron-Doped Silicon Tunneling Inter-layer Enables Efficient Silicon Heterojunction Solar Cells
	Zhou, Yinuo 1,2; Zhang, Honghua 1,2; Li, Zhenfei 1; Huang, Shenglei1,3 ; Du, Junlin 1; Han, Anjun 1; Shi, Jianhua 1; Wang, Guangyuan 1; Shi, Qiang 1; Zhao, Wenjie 1; Fu, Haoxin 4; Fan, Bin 4; Meng, Fanying 1,2; Liu, Wenzhu 1,2; Liu, Zhengxin1,2,3 ; Zhang, Liping 1,2
	2024
发表期刊	ACS APPLIED MATERIALS AND INTERFACES (IF:8.3[JCR-2023],8.7[5-Year])
ISSN	1944-8244
EISSN	1944-8252
卷号	16 期号:35 页码:46889-46896
发表状态	已发表
DOI	10.1021/acsami.4c07897
摘要	P-type hydrogenated nanocrystalline silicon (nc-Si:H) has been used as a hole-selective layer for efficient n-type crystalline silicon heterojunction (SHJ) solar cells. However, the presence of an additional valence band offset at the interface between intrinsic amorphous hydrogenated silicon and p-type nc-Si:H films will limit the hole carrier transportation. In this work, it has been found that when a heavily boron-doped silicon oxide layer deposited with high hydrogen dilution to silane (pB) was inserted into their interface, the fill factor of SHJ solar cells increases 3% absolutely because of the reduced valence band offset and the increased opportunity to provide a hopping tunnel assisted by the doping energy level and valence band tail states. Furthermore, the additional boron incorporation in intrinsic amorphous silicon adjacent to pB helps to enhance the built-in electric field, thus increasing the hole selectivity. By these means, the power conversion efficiency was improved from 23.9% to approximately 25%. © 2024 American Chemical Society.
关键词	Amorphous films Hard facing Hole concentration Hole mobility Hydrogenation Nanocrystalline materials Silicon wafers Surface discharges Valence bands Bandtail state Carrier collection Heterojunction solar cells Hole carrier collection Hole carriers Hydrogenated nanocrystalline silicon Multi-level valence band tail state Multilevels Silicon heterojunction solar cell Silicon heterojunctions Valence-band offset
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收录类别	EI ; SCI
语种	英语
资助项目	National Natural Science Foundation of China["62074153","T2322028","62004208"] ; Science and Technology Commission of Shanghai Municipality["22ZR1473200","20dz1207103"] ; China National Key RD Program[2022YFC2807104] ; Talent plan of Shanghai Branch, Chinese Academy of Sciences[CASSHB-QNPD-2023-001] ; Shanghai Rising-Star Program[23QA1411100] ; Foundation of the Key Laboratory of National Defense for Science and Technology of China[61428040202]
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:001306481900001
出版者	American Chemical Society
EI入藏号	20243516930091
EI主题词	Nanocrystals
EI分类号	1301.4.1 ; 1301.4.2 ; 1301.4.3 ; 201.1.1 ; 208.1 ; 701.1 Electricity: Basic Concepts and Phenomena ; 712.1 Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 761 Nanotechnology ; 802.2 Chemical Reactions
原始文献类型	Article in Press
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/415581
专题	物质科学与技术学院物质科学与技术学院_特聘教授组_刘正新组物质科学与技术学院_博士生 2060研究院
通讯作者	Liu, Zhengxin; Zhang, Liping
作者单位	1.Research Center for New Energy Technology, State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Changning, Shanghai; 200050, China 2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Shijingshan, Beijing; 100049, China 3.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China 4.Tongwei New Energy (Chengdu) Company, Ltd., Sichuan, Chengdu; 610200, China
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zhou, Yinuo,Zhang, Honghua,Li, Zhenfei,et al. Heavy Boron-Doped Silicon Tunneling Inter-layer Enables Efficient Silicon Heterojunction Solar Cells[J]. ACS APPLIED MATERIALS AND INTERFACES,2024,16(35):46889-46896.
APA	Zhou, Yinuo.,Zhang, Honghua.,Li, Zhenfei.,Huang, Shenglei.,Du, Junlin.,...&Zhang, Liping.(2024).Heavy Boron-Doped Silicon Tunneling Inter-layer Enables Efficient Silicon Heterojunction Solar Cells.ACS APPLIED MATERIALS AND INTERFACES,16(35),46889-46896.
MLA	Zhou, Yinuo,et al."Heavy Boron-Doped Silicon Tunneling Inter-layer Enables Efficient Silicon Heterojunction Solar Cells".ACS APPLIED MATERIALS AND INTERFACES 16.35(2024):46889-46896.