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InGaP/AlGaAs Near-UV and Visible Avalanche Photodiodes for Li-Fi Application
期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2024, 卷号: 36, 期号: 5, 页码: 293-296
作者:
Wang, Jingyi
;
Ge, Huachen
;
Liao, Yue
;
Shen, Daqi
;
Li, Linze
Adobe PDF(1532Kb)
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浏览/下载:336/14
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提交时间:2024/04/12
Aluminum
Aluminum gallium arsenide
Avalanche photodiodes
Bandwidth
Gallium
Gallium alloys
Gallium arsenide
Heterojunctions
Semiconductor alloys
Excess noise factor
External quantum efficiency
Light fidelity
Multiplication gain
Near-UV light detection
Radiative recombination
UV and visible light
UV light detection
Visible light bands
near-UV light detection
visible light communications
Linear-mode HgCdTe avalanche photodiode detectors for photon-counting applications (invited)
期刊论文
HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2023, 卷号: 52, 期号: 3
作者:
Guo, Huijun
;
Chen, Lu
;
Yang, Liao
;
Shen, Chuan
;
Xie, Hao
Adobe PDF(3193Kb)
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浏览/下载:376/0
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提交时间:2023/07/14
Avalanche photodiodes
Cadmium alloys
Cadmium telluride
Charge coupled devices
II-VI semiconductors
Incident light
Mercury amalgams
Mercury compounds
Molecular beam epitaxy
Particle beams
Photons
Semiconductor alloys
APD detectors
Device structure
Excess noise
Excess noise factor
Free-space communication
Linear modes
Linear-mode avalanche
Medium wave
Photon counting
Photon detection efficiency
Developments and Characterization of HgCdTe e-APDs at SITP
会议论文
PROCEEDINGS OF SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, Nantong, China, September 17, 2022 - September 19, 2022
作者:
Adobe PDF(1434Kb)
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浏览/下载:289/0
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提交时间:2023/06/02
Cadmium alloys
Dark currents
Economic and social effects
Focusing
II-VI semiconductors
Infrared radiation
Mercury amalgams
Narrow band gap semiconductors
Optical communication
Photons
Semiconductor alloys
Semiconductor doping
Cutoff wavelengths
Excess noise factor
Focal-plane arrays
Hgcdte APD
High gain
Low dark current
NEPh
PIN structures
Reverse-bias
Short wavelengths
Characterization of gain and excess noise for mid-wavelength infrared HgCdTe electron avalanche photodiodes
会议论文
PROC. SPIE, Nantong, China, September 17, 2022 - September 19, 2022
作者:
Adobe PDF(6007Kb)
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浏览/下载:361/0
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提交时间:2022/11/09
Avalanche photodiodes
Focal plane arrays
Focusing
II-VI semiconductors
Infrared radiation
Mercury amalgams
Pixels
Semiconductor alloys
Signal to noise ratio
Spectral density
Carrier multiplication
Current gains
Electron avalanche photodiode
Excess noise
Excess noise factor
Focal-plane arrays
Gain
Mid-wavelength infrared
Single carrier
Weak signal detection
Dark current and noise analysis for Long-wavelength infrared HgCdTe avalanche photodiodes
期刊论文
INFRARED PHYSICS AND TECHNOLOGY, 2022, 卷号: 123
作者:
Han, Xuepeng
;
Guo, Huijun
;
Yang, Liao
;
Zhu, Liqi
;
Yang, Dan
Adobe PDF(3596Kb)
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浏览/下载:582/1
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提交时间:2022/03/25
Avalanche photodiodes
Cadmium alloys
Dark currents
II-VI semiconductors
Infrared devices
Infrared radiation
Noise figure
Spectral density
Band-to-band tunnelling
Dark noise
Dependent characteristics
Excess noise factor
Hgcdte avalanche photodiode
High gain
Long-wavelength infrared
Noise
Temperature dependent
Temperature-dependent characteristic
The Latest Developments of HgCdTe e-APDs at SITP
会议论文
24TH NATIONAL LASER CONFERENCE & FIFTEENTH NATIONAL CONFERENCE ON LASER TECHNOLOGY AND OPTOELECTRONICS, Shanghai, PEOPLES R CHINA, OCT 17-20, 2020
作者:
Guo, Huijun
;
Chen, Lu
;
Yang, Liao
;
Yang, Dan
;
Shen, Chuan
Adobe PDF(588Kb)
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浏览/下载:352/0
|
提交时间:2021/06/11
HgCdTe
APD
Mid-wave
junction optimization
gain
dark current
excess noise factor
NEPh
HgCdTe avalanche photodiode FPA
期刊论文
红外与毫米波学报, 2019, 卷号: 38, 期号: 5, 页码: 587-590
作者:
Li Hao
;
Lin Chun
;
Zhou Song-Min
;
Guo Hui-Jun
;
Wang Xi
Adobe PDF(714Kb)
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浏览/下载:284/0
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提交时间:2019/12/05
HgCdTe
APD
FPA
NEPh
excess noise factor
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