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Multi-stage infrared detectors
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2025, 卷号: 40, 期号: 3
作者:
Shen, Zhijian
;
Yang, Zezheng
;
Dai, Zhecheng
;
Chen, Baile
Adobe PDF(4551Kb)
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浏览/下载:72/2
|
提交时间:2025/02/28
Hadrons
Infrared detectors
Infrared instruments
Particle beams
Particle detectors
Photonics
Photons
Quantum electronics
Remote sensing
'current
Detectivity
Detector technology
Infrared photodetector
Interband cascade infrared photodetector
Interband cascades
Multi-stage infrared detector
Multi-stages
Quantum cascade detector
Quantum cascade detectors
Investigation of a minority carrier trap in a NiO/β-Ga2O3p–n heterojunction via deep-level transient spectroscopy
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 卷号: 38, 期号: 10, 页码: 105010
作者:
Qu, Haolan
Adobe PDF(999Kb)
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浏览/下载:283/0
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提交时间:2023/09/23
NiO/beta-Ga2O3 p-n heterojunction
deep-level transient spectroscopy
minority carrier trap
time constant
trap concentration
Emission and Capture Characteristics of Electron Trap (Eemi = 0.8eV) in Si-doped β-Ga2O3 Epilayer
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 卷号: 38, 期号: 1, 页码: 015001
作者:
Qu, Haolan
;
Chen, Jiaxiang
;
Zhang, Yu
;
Sui, Jin
;
Gu, Yitian
Adobe PDF(796Kb)
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浏览/下载:411/0
|
提交时间:2022/11/08
Activation energy
Deep level transient spectroscopy
Electric fields
Epilayers
Capture
Capture cross sections
Deep levels transient spectroscopy
Emission
Impact of temperatures
Lambda's
Single electron
Trap
Trap concentration
Β-ga2O3
Long-wavelength InAs/GaSb superlattice double heterojunction infrared detectors using InPSb/InAs superlattice hole barrier
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 卷号: 37, 期号: 5
作者:
Liu, Jiafeng
;
Zhu, He
Adobe PDF(1708Kb)
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浏览/下载:199/0
|
提交时间:2022/05/05
InAs
GaSb superlattice
double heterojunction
metal-organic chemical vapor deposition
long-wavelength infrared
Measurement and Characterization of Unstable Pixels of Long-wavelength HgCdTe Infrared Focal Plane Array
期刊论文
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2022, 卷号: 22, 期号: 2, 页码: 93-100
作者:
Zhang, Yu
;
Zhou, Songmin
;
Li, Xun
;
Wang, Xi
;
Zhu, Liqi
Adobe PDF(2624Kb)
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浏览/下载:273/1
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提交时间:2022/05/20
Bias voltage
Cadmium alloys
Cadmium telluride
Dark currents
II-VI semiconductors
Infrared detectors
Infrared radiation
Mercury amalgams
Mercury compounds
Pixels
Semiconductor alloys
Array detectors
Fluctuation characteristics
Focal-plane arrays
Imaging quality
Linear-array
Long wavelength
Long-wavelength infrared
Mercury cadmium telluride
Surface passivation
Unstable pixel
High-performance transparent conductive film by using ultra-thin metal grids
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 卷号: 37, 期号: 3
作者:
Yin, Zhiqin
;
Liu, Qingquan
;
Cui, Zhuangzhuang
;
Xuan, Zhiyi
;
Xie, Maobing
Adobe PDF(1297Kb)
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浏览/下载:310/0
|
提交时间:2022/02/14
transparent conductive film
ultra-thin
metal grids
ultraviolet lithography
Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes by deep-level transient spectroscopy
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 卷号: 36, 期号: 5, 页码: 055015
作者:
Chen, Jiaxiang
;
Luo, Haoxun
;
Qu, HaoLan
;
Zhu, Min
;
Guo, Haowen
Adobe PDF(1827Kb)
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收藏
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浏览/下载:496/3
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提交时间:2021/05/26
Ga2O3
DLTS
Schottky diode
emission kinetics
single trap
Electric fields
Gallium compounds
Temperature distribution
Tin metallography
Emission process
Emission time
Enhanced Emission
Poole
Frenkel effect
Single electron
Temperature dependence
Time constants
Trap emissions
HVPE growth of bulk GaN with high conductivity for vertical devices
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 卷号: 36, 期号: 1
作者:
Xia, Songyuan
;
Zhang, Yumin
;
Wang, Jianfeng
;
Chen, Jihu
;
Xu, Ke
Adobe PDF(1211Kb)
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浏览/下载:417/6
|
提交时间:2020/12/23
gallium nitride
Si doping
vertical devices
Recent advances in mechanical strain engineering of low-dimensional semiconductors and their applications in high-performance quantum emitters
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 卷号: 35, 期号: 10
作者:
Tao, Lue
;
Ou, Weiwen
;
Li, Yang
;
Liao, Han
;
Zhang, Jiaxiang
Adobe PDF(4338Kb)
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收藏
|
浏览/下载:1101/244
|
提交时间:2020/11/02
strain engineering
low-dimensional semiconductor
quantum dots
nonclassical light sources
binding energy
fine-structure splitting
Deep levels analysis in wavelength extended InGaAsBi photodetector
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 卷号: 34, 期号: 9
作者:
Huang, Jian
;
Chen, Baile
;
Deng, Zhuo
;
Gu, Yi
;
Ma, Yingjie
Adobe PDF(1140Kb)
|
收藏
|
浏览/下载:591/7
|
提交时间:2019/09/23
InGaAsBi
photodetector
deep level analysis
low frequency noise
photoluminescence
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