Si substrates playing two opposing roles in the process of preparing graphene by PECVD

doi:10.1016/j.apsusc.2019.144404

	Si substrates playing two opposing roles in the process of preparing graphene by PECVD
	Zhang, Pengbo1,2,3 ; Jiang, Xiangyu 1,2; Fang, Xiaohong 1,2; Yang, Liyou 1; Chen, Xiaoyuan1,2,3
	2020-01-31
发表期刊	APPLIED SURFACE SCIENCE
ISSN	0169-4332
卷号	501
发表状态	已发表
DOI	10.1016/j.apsusc.2019.144404
摘要	Exposed in plasma excited by a RF coil in a plasma-enhanced chemical vapor deposition (PECVD) process to grow graphene, the silicon substrate is found to play a crucial role. Considering the results of simulations and experiments, the silicon substrate seems to be surrounded by a sheath electric field and consequently changes the local electric field in the vicinity of the substrate surface, which is likely to contribute to the deposition of graphene. In particular, the naturally formed pyramid structure on the top side of a textured silicon wafer turns out localized enhancing the electric field and make the pyramid peak prior to graphene nucleating and growing. Due to the different distribution of the sheath electric field, the pyramid structure on the bottom surface of the same substrate probably suppresses the nucleation and growth of graphene at the same time. © 2019
收录类别	EI ; SCIE ; SCI
资助项目	CAS-SAFEA International Partnership Program for Creative Research Teams[]
出版者	Elsevier B.V.
EI入藏号	20194307566196
EI主题词	Electric fields ; Graphene ; Plasma CVD ; Plasma enhanced chemical vapor deposition ; Polarization ; Silicon wafers ; Textures
EI分类号	Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Coating Techniques:813.1
原始文献类型	Journal article (JA)
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/80574
专题	物质科学与技术学院_博士生物质科学与技术学院_特聘教授组_陈小源组
通讯作者	Fang, Xiaohong
作者单位	1.Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai; 201210, China 2.University of Chinese Academy of Sciences, Beijing; 100049, China 3.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China
第一作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zhang, Pengbo,Jiang, Xiangyu,Fang, Xiaohong,et al. Si substrates playing two opposing roles in the process of preparing graphene by PECVD[J]. APPLIED SURFACE SCIENCE,2020,501.
APA	Zhang, Pengbo,Jiang, Xiangyu,Fang, Xiaohong,Yang, Liyou,&Chen, Xiaoyuan.(2020).Si substrates playing two opposing roles in the process of preparing graphene by PECVD.APPLIED SURFACE SCIENCE,501.
MLA	Zhang, Pengbo,et al."Si substrates playing two opposing roles in the process of preparing graphene by PECVD".APPLIED SURFACE SCIENCE 501(2020).