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Ultrafast self-trapping of photoexcited carriers sets the upper limit on antimony trisulfide photovoltaic devices | |
2019-10-04 | |
发表期刊 | NATURE COMMUNICATIONS |
ISSN | 2041-1723 |
卷号 | 10 |
发表状态 | 已发表 |
DOI | 10.1038/s41467-019-12445-6 |
摘要 | Antimony trisulfide (Sb2S3) is considered to be a promising photovoltaic material; however, the performance is yet to be satisfactory. Poor power conversion efficiency and large open circuit voltage loss have been usually ascribed to interface and bulk extrinsic defects By performing a spectroscopy study on Sb2S3 polycrystalline films and single crystal, we show commonly existed characteristics including redshifted photoluminescence with 0.6 eV Stokes shift, and a few picosecond carrier trapping without saturation at carrier density as high as approximately 10(20) cm(-3). These features, together with polarized trap emission from Sb2S3 single crystal, strongly suggest that photoexcited carriers in Sb2S3 are intrinsically self-trapped by lattice deformation, instead of by extrinsic defects. The proposed self-trapping explains spectroscopic results and rationalizes the large open circuit voltage loss and near-unity carrier collection efficiency in Sb2S3 thin film solar cells. Self-trapping sets the upper limit on maximum open circuit voltage (approximately 0.8 V) and thus power conversion efficiency (approximately 16 %) for Sb2S3 solar cells. |
URL | 查看原文 |
收录类别 | SCI ; SCIE |
语种 | 英语 |
资助项目 | National Key Research and Development Program of China[2017YFA0207700] ; National Key Research and Development Program of China[2016YFA0200604] ; National Key Research and Development Program of China[2017YFA0204904] |
WOS研究方向 | Science & Technology - Other Topics |
WOS类目 | Multidisciplinary Sciences |
WOS记录号 | WOS:000489014000005 |
出版者 | NATURE PUBLISHING GROUP |
WOS关键词 | SOLAR-CELLS ; OPTICAL-PROPERTIES ; SMALL POLARONS ; SB2S3 ; RECOMBINATION ; PERFORMANCE ; FILM ; MECHANISM ; CRYSTALS |
原始文献类型 | Article |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/80415 |
专题 | 物质科学与技术学院_PI研究组_刘伟民组 |
通讯作者 | Chen, Tao; Zhu, Haiming |
作者单位 | 1.Zhejiang Univ, Ctr Chem High Performance & Novel Mat, Dept Chem, Hangzhou 310027, Zhejiang, Peoples R China 2.Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China 3.Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 5.Zhejiang Univ, Coll Opt Sci & Engn, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Zhejiang, Peoples R China |
推荐引用方式 GB/T 7714 | Yang, Zhaoliang,Wang, Xiaomin,Chen, Yuzhong,et al. Ultrafast self-trapping of photoexcited carriers sets the upper limit on antimony trisulfide photovoltaic devices[J]. NATURE COMMUNICATIONS,2019,10. |
APA | Yang, Zhaoliang.,Wang, Xiaomin.,Chen, Yuzhong.,Zheng, Zhenfa.,Chen, Zeng.,...&Zhu, Haiming.(2019).Ultrafast self-trapping of photoexcited carriers sets the upper limit on antimony trisulfide photovoltaic devices.NATURE COMMUNICATIONS,10. |
MLA | Yang, Zhaoliang,et al."Ultrafast self-trapping of photoexcited carriers sets the upper limit on antimony trisulfide photovoltaic devices".NATURE COMMUNICATIONS 10(2019). |
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