Comparative study of the ion-slicing mechanism of Y-cut LiNbO<inf>3</inf>

doi:10.1063/1.5112792

	Comparative study of the ion-slicing mechanism of Y-cut LiNbO3
	Huang, Kai 1; Li, Zhongxu 1,4; Yan, Youquan 1,4; Zhao, Xiaomeng 1; Li, Wenqin 1; You, Tiangui 1; Zhang, Shibin 1,4; Zhou, Hongyan 1,4; Lin, Jiajie 1,4; Xu, Wenhui1,5 ; Yi, Ailun 1,4; Huang, Hao 1,5; Zhou, Min 1; Yu, Wenjie 1; Xie, Junyu 2; Zeng, Xiaobin 2; Liu, Renjie 3; Ou, Xin 1
	2019
发表期刊	AIP ADVANCES (IF:1.4[JCR-2023],1.4[5-Year])
ISSN	21583226
卷号	9 期号:8
发表状态	已发表
DOI	10.1063/1.5112792
摘要	Ion-cutting of piezoelectric LiNbO3 (LN) thin film provides a material platform for the design and fabrication of novel integrated photonics and RF MEMS devices. In this paper, the ion-slicing mechanisms of He-implanted LN with different orientations are investigated. The anisotropy of film exfoliation is observed on LN wafers with different orientations. The Z-cut LN shows regular surface blistering and "plate-like" exfoliation, while the Y-cut LN shows the unique "rolled-up" exfoliation. Two types of defect, i.e. the pressure-related plateau defect and the stress-related crack defect, are observed to contribute to the film exfoliation. Moreover, the defect evolution in H-implanted LN is investigated. In comparison with the He-implanted LN, implanted H ions are mainly trapped by O-H bond and the implantation-induced strain is not strong enough, which are inadequate to form the continuous crack. Therefore the H ions are not favorable for the mass production of LNOI substrates. © 2019 Author(s).
收录类别	EI ; SCIE ; SCI
语种	英语
资助项目	National Natural Science Foundation of China[11622545] ; National Natural Science Foundation of China[11705262] ; National Natural Science Foundation of China[61851406] ; National Natural Science Foundation of China[61874128] ; National Natural Science Foundation of China[U1732268]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000483883400073
出版者	American Institute of Physics Inc.
EI入藏号	20193207283167
EI主题词	Cracks ; Exfoliation (materials science) ; Ions ; Lithium compounds ; Niobium compounds ; Photonics ; Substrates ; Thin films
EI分类号	Light/Optics:741.1 ; Atomic and Molecular Physics:931.3
WOS关键词	LITHIUM-NIOBATE ; FABRICATION ; HYDROGEN
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/64555
专题	物质科学与技术学院_硕士生物质科学与技术学院_博士生
通讯作者	Ou, Xin
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Beijing Zhongkexin Elect Equipment Co Ltd, Beijing 101111, Peoples R China 3.Shanghai Kingstone Semicond Joint Stock Co Ltd, Shanghai 201399, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 5.ShanghaiTech Univ, Shanghai 201210, Peoples R China
推荐引用方式 GB/T 7714	Huang, Kai,Li, Zhongxu,Yan, Youquan,et al. Comparative study of the ion-slicing mechanism of Y-cut LiNbO3[J]. AIP ADVANCES,2019,9(8).
APA	Huang, Kai.,Li, Zhongxu.,Yan, Youquan.,Zhao, Xiaomeng.,Li, Wenqin.,...&Ou, Xin.(2019).Comparative study of the ion-slicing mechanism of Y-cut LiNbO3.AIP ADVANCES,9(8).
MLA	Huang, Kai,et al."Comparative study of the ion-slicing mechanism of Y-cut LiNbO3".AIP ADVANCES 9.8(2019).