ShanghaiTech University Knowledge Management System
| High-Speed InGaP/AlGaAs Avalanche Photodiodes for LED-Based Visible Light Communication | |
| 2025 | |
| 发表期刊 | IEEE TRANSACTIONS ON ELECTRON DEVICES (IF:2.9[JCR-2023],2.9[5-Year]) |
| ISSN | 1557-9646 |
| EISSN | 1557-9646 |
| 卷号 | PP期号:99 |
| 发表状态 | 已发表 |
| DOI | 10.1109/TED.2025.3559492 |
| 摘要 | We report on the demonstration of an InGaP/AlGaAs heterojunction avalanche photodiode (APD) with an aluminum composition of 0.8, optimized for high-speed visible-light detection. The APD achieves a 3-dB bandwidth of 2.25 GHz at a multiplication gain of 72, corresponding to a gain–bandwidth product (GBP) of 162 GHz. It exhibits low dark current, low excess noise, and high multiplication gain, highlighting its suitability for high-performance optical applications. To showcase its potential, we integrated the APD into a visible-light communication system with a GaN micro-LED transmitter, achieving a data rate exceeding 1063 Mb/s. These findings highlight the promise of InGaP/AlGaAs APDs for advancing high-speed visible-light communication technologies. |
| 关键词 | Aluminum gallium nitride Avalanche diodes Avalanche photodiodes Gallium alloys Gallium nitride Gallium phosphide Indium phosphide Laser beams Light emitting diodes Optical communication Semiconducting indium phosphide 3 dB bandwidth Aluminum composition Avalanche photodiode High Speed Light detection Lightemitting diode Micro light-emitting diode Multiplication gain Visible light Visible-light communication |
| URL | 查看原文 |
| 收录类别 | EI |
| 语种 | 英语 |
| 出版者 | Institute of Electrical and Electronics Engineers Inc. |
| EI入藏号 | 20251718308892 |
| EI主题词 | III-V semiconductors |
| EI分类号 | 202.9.3 Others, including Bismuth, Boron, Cadmium, Cobalt, Mercury, Niobium, Selenium, Silicon, Tellurium and Zirconium ; 712.1.2 Compound Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 717.1 Optical Communication Systems ; 744.5 Laser Beam Interactions ; 804.2 Inorganic Compounds |
| 原始文献类型 | Article in Press |
| 来源库 | IEEE |
| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/520693 |
| 专题 | 信息科学与技术学院 信息科学与技术学院_PI研究组_陈佰乐组 信息科学与技术学院_硕士生 信息科学与技术学院_博士生 |
| 作者单位 | 1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.School of Information Science and Technology, Fudan University, Shanghai, China 3.University of Chinese Academy of Sciences, Beijing, China |
| 第一作者单位 | 信息科学与技术学院 |
| 第一作者的第一单位 | 信息科学与技术学院 |
| 推荐引用方式 GB/T 7714 | Yifan Fan,Xiangyang Chen,Zhecheng Dai,et al. High-Speed InGaP/AlGaAs Avalanche Photodiodes for LED-Based Visible Light Communication[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2025,PP(99). |
| APA | Yifan Fan.,Xiangyang Chen.,Zhecheng Dai.,Jingyi Wang.,Daqi Shen.,...&Baile Chen.(2025).High-Speed InGaP/AlGaAs Avalanche Photodiodes for LED-Based Visible Light Communication.IEEE TRANSACTIONS ON ELECTRON DEVICES,PP(99). |
| MLA | Yifan Fan,et al."High-Speed InGaP/AlGaAs Avalanche Photodiodes for LED-Based Visible Light Communication".IEEE TRANSACTIONS ON ELECTRON DEVICES PP.99(2025). |
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