InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength

doi:10.1109/LPT.2019.2926785

	InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength
	Zhiyang Xie; Yaojiang Chen; Ningtao Zhang; Baile Chen
	2019-08-15
发表期刊	IEEE PHOTONICS TECHNOLOGY LETTERS (IF:2.3[JCR-2023],2.2[5-Year])
ISSN	1041-1135
卷号	31 期号:16 页码:1331-1334
发表状态	已发表
DOI	10.1109/LPT.2019.2926785
摘要	High-speed back-illuminated InGaAsP/InP unitraveling-carrier photodiodes (PDs) at 1064 nm were demonstrated with 3-dB bandwidth of 17.8 GHz at -5-V bias. PDs with 40-mu m-diameter deliver RF output power as high as 19.5 dBm at 13 GHz. This structure can achieve low dark current density of 1 x 10(-8) A/cm(2) at -5-V bias and quantum efficiency of 45.2% at 1064 nm. An analytical model based on S-parameter fitting was built to extract parameter to assess the bandwidth limiting factors.
关键词	UTC photodiode 1064nm wavelength low dark current high-speed
URL	查看原文
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	ShanghaiTech University[F-0203-16-002]
WOS研究方向	Engineering ; Optics ; Physics
WOS类目	Engineering, Electrical & Electronic ; Optics ; Physics, Applied
WOS记录号	WOS:000476811600006
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
EI入藏号	20193007233531
EI主题词	III-V semiconductors ; Photodiodes ; Scattering parameters
EI分类号	Electric Networks:703.1 ; Information Theory and Signal Processing:716.1
原始文献类型	Article
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/49926
专题	信息科学与技术学院信息科学与技术学院_PI研究组_陈佰乐组信息科学与技术学院_硕士生信息科学与技术学院_博士生
作者单位	School of Information Science and Technology, ShanghaiTech University, Shanghai, China
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Zhiyang Xie,Yaojiang Chen,Ningtao Zhang,et al. InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength[J]. IEEE PHOTONICS TECHNOLOGY LETTERS,2019,31(16):1331-1334.
APA	Zhiyang Xie,Yaojiang Chen,Ningtao Zhang,&Baile Chen.(2019).InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength.IEEE PHOTONICS TECHNOLOGY LETTERS,31(16),1331-1334.
MLA	Zhiyang Xie,et al."InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength".IEEE PHOTONICS TECHNOLOGY LETTERS 31.16(2019):1331-1334.