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Pressure-Induced Structural Phase Transition and a Special Amorphization Phase of Two-Dimensional Ferromagnetic Semiconductor Cr2Ge2Te6 | |
2019-06-06 | |
发表期刊 | JOURNAL OF PHYSICAL CHEMISTRY C |
ISSN | 1932-7447 |
卷号 | 123期号:22页码:13885-13891 |
发表状态 | 已发表 |
DOI | 10.1021/acs.jpcc.9b02415 |
摘要 | Layered transition-metal trichalcogenides have become one of the research frontiers as two-dimensional magnets and candidate materials used for phase-change memory devices. Herein we report the high-pressure synchrotron X-ray diffraction and resistivity measurements on Cr2Ge2Te6 (CGT) single crystal by using diamond anvil cell techniques, which reveal a mixture of crystalline-to-crystalline and crystalline-to-amorphous transitions taking place concurrently at 18.3-29.2 GPa. The polymorphic transition could be interpreted by atomic layer reconstruction, and the amorphization could be understood in connection with randomly flipping atoms into van der Waals gaps. The amorphous (AM) phase is quenchable to ambient conditions. The electrical resistance of CGT shows a bouncing point at similar to 18 GPa, consistent with the polymorphism phase transition. Interestingly, the high-pressure AM phase exhibits metallic resistance with the magnitude comparable to that of high-pressure crystalline phases, whereas the resistance of the AM phase at ambient pressure fails to exceed that of the crystalline phase, indicating that the AM phase of CGT appearing under high pressure is quite unique, and similar behavior has never been observed in other phase-change materials. The results definitely would have significant implications for the design of new functional materials. |
收录类别 | SCI ; SCIE ; EI |
资助项目 | National Key RD Plan of China[2017YFB0701701] ; National Key RD Plan of China[2017YFB0405601] |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
WOS类目 | Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
WOS记录号 | WOS:000470938400060 |
出版者 | AMER CHEMICAL SOC |
EI入藏号 | 20192507054640 |
EI主题词 | Amorphization ; Chromium compounds ; Crystalline materials ; Functional materials ; Germanium compounds ; High pressure engineering ; Magnetic semiconductors ; Phase change memory ; Polymorphism ; Single crystals ; Tellurium compounds ; Transition metals ; Van der Waals forces |
EI分类号 | Metallurgy and Metallography:531 ; Magnetic Materials:708.4 ; Data Storage, Equipment and Techniques:722.1 ; Physical Chemistry:801.4 ; Chemical Operations:802.3 ; Crystalline Solids:933.1 ; Materials Science:951 |
WOS关键词 | REVERSIBLE AMORPHIZATION ; AMORPHOUS TRANSITION ; MECHANISM |
原始文献类型 | Article |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/48986 |
专题 | 物质科学与技术学院_PI研究组_郭艳峰组 物质科学与技术学院_公共科研平台_分析测试平台 物质科学与技术学院_博士生 |
共同第一作者 | Xia, Wei; Xu, Kailang |
通讯作者 | Xu, Ming; Zhao, Jinggeng; Guo, Yanfeng |
作者单位 | 1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Analyt Instrumentat Ctr, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China 5.Harbin Inst Technol, Dept Phys, Harbin 150080, Heilongjiang, Peoples R China 6.Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China |
第一作者单位 | 物质科学与技术学院 |
通讯作者单位 | 物质科学与技术学院 |
第一作者的第一单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Yu, Zhenhai,Xia, Wei,Xu, Kailang,et al. Pressure-Induced Structural Phase Transition and a Special Amorphization Phase of Two-Dimensional Ferromagnetic Semiconductor Cr2Ge2Te6[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2019,123(22):13885-13891. |
APA | Yu, Zhenhai.,Xia, Wei.,Xu, Kailang.,Xu, Ming.,Wang, Hongyuan.,...&Guo, Yanfeng.(2019).Pressure-Induced Structural Phase Transition and a Special Amorphization Phase of Two-Dimensional Ferromagnetic Semiconductor Cr2Ge2Te6.JOURNAL OF PHYSICAL CHEMISTRY C,123(22),13885-13891. |
MLA | Yu, Zhenhai,et al."Pressure-Induced Structural Phase Transition and a Special Amorphization Phase of Two-Dimensional Ferromagnetic Semiconductor Cr2Ge2Te6".JOURNAL OF PHYSICAL CHEMISTRY C 123.22(2019):13885-13891. |
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